Nonclassical quantum effects gradually reach domains of physics of large systems previously considered as purely classical. We derive a hierarchy of operational criteria suitable for a reliable detection of nonclassicality of light from an arbitrarily large ensemble of independent single-photon emitters. We show, that such large ensemble can always emit nonclassical light without any phase refe...

Synthetic aperture is a well-known super-resolution technique which extends the resolution capabilities of an imaging system beyond the theoretical Rayleigh limit dictated by the system's actual aperture. Using this technique, several patterns acquired by an aperture-limited system, from various locations, are tiled together to one large pattern which could be captured only by a virtual system ...

In this paper, we show that the kinetics of annealing of light-induced defects in microcrystalline silicon is similar to that of amorphous silicon. Dilution series of pin and nip single-junction microcrystalline silicon (μc-Si:H) solar cells were light-soaked (AM 1.5, 1000h at 50°C). Their relative efficiency loss between initial and degraded states depends on the i-layer crystallinity. Subsequ...

In order to realize high-yield speckle modulation, we developed a novel spatial light modulator using zinc oxide single crystal doped with nitrogen ions. The distribution of dopants was optimized to induce characteristic optical functions by applying an annealing method developed by us. The device is driven by a current in the in-plane direction, which induces magnetic fields. These fields stro...

Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of anneal...

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic sub...