Layer-structured indium selenide (In 2Se 3) nanowires (NWs) have large anisotropy in both shape and bonding. In 2Se 3 NWs show two types of growth directions: [11-20] along the layers and [0001] perpendicular to the layers. We have developed a powerful technique combining high-resolution transmission electron microscopy (HRTEM) investigation with single NW electrical transport measurement, whic...

Many liquid metals exposed to air develop an oxide film on their outer surface. This film is sufficiently solid-like to provide mechanical stability to small liquid metal droplets, yet weak enough to allow the droplets to be malleable. These properties are useful in both micro-electronics and microfluidics; however, little is known about how to characterize them. Here we probe the elastic, yiel...

Structures constructed from supertetrahedral clusters of TX4 tetrahedra may have giant pores representing more than 80% of their crystal volume and cation-exchange properties.[1] As well as creating porous materials we note that larger clusters are comparable in size with the individual nanocrystallites of tetrahedral sulfide (e.g. CdS) “quantum dots” which show great promise and are currently ...

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes ...

The reactions of group 13 metal trichlorides with aromatic azides were examined by CW EPR and pulsed ENDOR spectroscopies. Complex EPR spectra were obtained from reactions of aluminium, gallium and indium trichlorides with phenyl azides containing a variety of substituents. Analysis of the spectra showed that 4-methoxy-, 3-methoxy- and 2-methoxyphenyl azides all gave 'dimer' radical cations [Ar...

Nanoscale superconductor/semiconductor hybrid devices are assembled from indium arsenide semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 kelvin, the high transparency of the contacts gives rise to proximity-induced superconductivity. The nanowires form superconducting weak links operating as mesoscopic Josephson junctions with electrically tun...

Indium nitride has attracted increasing attention in the last few years because of its properties of potential value in optoelectronic devices and other technologies. There have been several efforts to prepare InN nanostructures, but the results reported are not altogether complete and satisfactory. Nanocrystals of InN have been produced by the reaction of InCl3 and Li3N at 250 8C, but the mate...

The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5–20.0 eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein–Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-est...

The indium trichloride method of Watson and Aldridge (38) for staining nucleic acids for electron microscopy was employed to study the relationship of DNA to the structure of the synaptinemal complex in meiotic prophase chromosomes of the domestic rooster. The selectivity of the method was demonstrated in untreated and DNase-digested testis material by comparing the distribution of indium stain...

The structure of the title compound, vanadium indium penta-deca-molybdenum nona-deca-selenide, V(1.42)In(1.83)Mo(15)Se(19), is isotypic with In(2.9)Mo(15)Se(19) [Grüttner et al. (1979 ▶). Acta Cryst. B35, 285-292]. It is characterized by two cluster units Mo(6)Se(i) (8)Se(a) (6) and Mo(9)Se(i) (11)Se(a) (6) (where i represents inner and a apical atoms) that are present in a 1:1 ratio. The clust...