The UNSW node of the Hot Carrier Solar Cell project is investigating absorbers which slow the rate of carrier cooling an essential element of a successful cell. This work includes modelling the limiting efficiencies of cells using real material properties and modelling the phonon dispersions of ordered arrays of quantum dots. The object of the latter is to determine the potential to modify the ...

The effects of hot-carrier stress (HCS) on the performance of NMOSFETs and a fully integrated low noise amplifier (LNA) made of NMOSFETs in a 0.18 lm CMOS technology are studied. The main effects of HCS on single NMOSFETs are an increase in threshold voltage and a decrease in channel carrier mobility, which lead to a drop in the biasing current of the transistors. In the small-signal model of t...

In this work, we examine the impact of hybrid bimetallic Au/Ag core/shell nanostructures on the carrier dynamics of methylammonium lead tribromide (MAPbBr3) mesoporous perovskite solar cells (PSCs). Plasmon-enhanced PSCs incorporated with Au/Ag nanostructures demonstrated improved light harvesting and increased power conversion efficiency by 26% relative to reference devices. Two complementary ...

We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface field and thus GIDL current vary with oxide trapped charge. By monitoring the temporal evolution of GIDL current, the oxide charge trapping/detrappi...

Designing reliable CMOS chips involve careful circuit design with attention directed to some of the potential reliability problems such as electromigration and hot carrier e ects. This paper considers logic synthesis to handle electromigration and hot carrier degradation early in the design phase. The electromigration and the hot carier e ects are estimated at the gate level using signal activi...

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using theBoltzmann equation approach.Wefind that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculat...

Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and ...

Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the VT -shift shows a remarkable absence of temperature dependence for the deuterated samples...