Compared to standard Electron Spin Resonance (ESR), EDMR has proven to be a more sensitive method in detecting paramagnetic states in semiconductors. If certain transport processes like recombination or hopping are spin-dependent, they can be detected by EDMR via resonant changes in the conductivity of the sample under ESR conditions. The application of this technique to electronic devices is p...

Multilayer nanospheres with alternating 2H-MoS2 and C layers were studied as a cathode base for lithium power sources. Interesting hierarchical structure, synergetic effect, and the presence of defects as supplementary active sites, introduced by the additional annealing at 773 K in Ar atmosphere, have determined the conductivity, referred to symmetric hopping or random barrier model, and led t...

A tight-binding Hamiltonian is used to study the electronic properties of covalently bonded, crossed ~5,5! metallic nanotubes with an increasing degree of disorder in the junction region. Ideal junctions with a few topological defects show Ohmic behavior. Upon increasing disorder, Ohmic conduction is suppressed in favor of hopping conductivity. Strongly disordered junctions as could be obtained...

UNLABELLED We describe a simple mechanical approach for low-density polyethylene film coating by multilayer graphene. The technique is based on the exfoliation of nanocrystalline graphite (few-layer graphene) by application of shear stress and allows to obtain thin graphene layers on the plastic substrate. We report on the temperature dependence of electrical resistance behaviors in films of di...

The two-dimensional Hubbard model exhibits superconductivity with d-wave symmetry even at half-filling in the presence of a next-nearest neighbor hopping. Using plaquette cluster dynamical mean-field theory with a continuous-time quantum Monte Carlo impurity solver, we reveal the non-Fermi liquid character of the metallic phase in proximity to the superconducting state. Specifically, the low-fr...

We show results of broadband dielectric measurements on the charge ordered, proposed to be multiferroic material LuFe(2)O(4). The temperature and frequency dependence of the complex permittivity as investigated for temperatures above and below the charge-order transition near T(CO)≈320  K and for frequencies up to 1 GHz can be well described by a standard equivalent-circuit model considering Ma...

A model of hopping conductivity is proposed that takes into account the nonlinear dependence of the mobility of the charge carriers on an externally applied field. The latter is known to be the main origin of the creation of high-field domains in n-type polar semiconductors and is responsible there for the current oscillations observed in the so-called Gunn effect. In this paper we study the ef...

The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(omega) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to omeg...

The evidence of a significant role played by electron-interaction effects in disordered metals' ' suggests an even greater role in the insulating phase" where metallic screening is absent. Historically, a number of experiments in the localized regime have been explained on the basis of the noninteracting Anderson model, in which the insulator is viewed as a Fermi glass." The most widely applied...

Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations sugge...