The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Tkansistor (HBT) devices has opened a door for GHz Field Programmable Gate Arrays (FPGAs).ls2 The integration of high-speed SiGe HBTs and low-power CMOS gives a significant speed advantage t o SiGe FPGAs over CMOS FPGAs. In the past, high static power consump tion discouraged the pursuit of bipolar FPGAs from being scaled up si...

In this paper the distortion components are defined for elementary transistor stages such as a single-transistor amplifier and a differential pair using bipolar transistors or MOST’s. Moreover, the influence of feedback is examined. Numerical examples are given for sake of illustration.

A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case...

Introduction This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated in a ...

For the iirst time, we show a departure from the conventional dependence of fi on base thickness xs in abrupt junction n-p-n heterojunction bipolar transistors (HBTs). This is to be contrasted with the familiar fl a l/xi found in homojunction bipolar transistors where current gain is limited by diffusive base transport. Our data, combined with high frequency and collector breakdown measurements...

An original scheme for constructing an ultra-wideband single-transistor generator of noise-like oscillations the microwave range wavelengths was proposed. The contains inertial converter output signal a nonlinear amplifier with positive feedback, which modulates supply voltage active element (transistor). experimental model chaotic based on powerful domestic transistor 2T982A-2 operating in sma...

Features u Automatic component identification ⇒ Bipolar transistor, with or without protection diode and/or B-E shunt resistor ⇒ Darlington transistors ⇒ Enhancement mode MOSFETs ⇒ Junction FETs ⇒ Triac ⇒ Thyristors ⇒ Diodes ⇒ Unijunction transistors u Automatic pinout identification for all the above components u Gain measurement for bipolar transistors u Test current display u VBE/IB measurem...

This work reports experimental data for the thermal resistance and junction temperature of high-performance InP/InGaAs single heterojunction bipolar transistors (SHBTs). The effects of device scaling and layer epitaxial design are investigated, and a theoretical model is developed to examine the results.

A simple experimental procedure is proposed to determine the separate ranges of reverse collector-base bias where neutral base recombination and avalanche breakdown, respectively, dominate base current reduction in silicon germanium heterojunction bipolar transistors (SiGe HBT’s) which exhibit significant neutral base recombination.