An original scheme for constructing an ultra-wideband single-transistor generator of noise-like oscillations the microwave range wavelengths was proposed. The contains inertial converter output signal a nonlinear amplifier with positive feedback, which modulates supply voltage active element (transistor). experimental model chaotic based on powerful domestic transistor 2T982A-2 operating in sma...

Features u Automatic component identification ⇒ Bipolar transistor, with or without protection diode and/or B-E shunt resistor ⇒ Darlington transistors ⇒ Enhancement mode MOSFETs ⇒ Junction FETs ⇒ Triac ⇒ Thyristors ⇒ Diodes ⇒ Unijunction transistors u Automatic pinout identification for all the above components u Gain measurement for bipolar transistors u Test current display u VBE/IB measurem...

This work reports experimental data for the thermal resistance and junction temperature of high-performance InP/InGaAs single heterojunction bipolar transistors (SHBTs). The effects of device scaling and layer epitaxial design are investigated, and a theoretical model is developed to examine the results.

A simple experimental procedure is proposed to determine the separate ranges of reverse collector-base bias where neutral base recombination and avalanche breakdown, respectively, dominate base current reduction in silicon germanium heterojunction bipolar transistors (SiGe HBT’s) which exhibit significant neutral base recombination.

We consider the minority transport in a heterostructure bipolar transistor whose base band gap narrows down toward the collector in Ndiscontinuous steps. Assuming that the potential energy drop at each step is sufficiently large to prevent the reverse flow of minority carriers, we show that the total base propagation delay r is shorter by a factor of iV compared to the diffusive delay in a flat...

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

We present results of fully two-dimensional numerical simulations of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) in comparison with experimental data. Among the critical modeling issues discussed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown in Si. # 2003 Elsevier B.V. All rights...

-Recent developments in ultra-low-noise, cryogenically-cooled, heterostructure field-effect transistor (HFET’s) receivers for frequencies up to 110 GHz are reviewed. Design and examples of the realization of InP HFET receivers in the frequency range 18 to 110 GHz are described. Applications to ultra-low-noise radio astronomy receivers, as well as broadband continuum radiometers, are discussed.

A detailed description and analysis on the behaviour of a bipolar junction transistor in chaotic operation is presented. Bipolar Junction Transistors (BJTs) are basic ingredients of chaotic Colpitts oscillators, which aim at generating chaotic signals for secure communications. The high frequency operation of the chaotic oscillators is a challenging issue due to the parasitic capacitance of the...