We present detailed measurements of the temperature dependence of the Hall and longitudinal resistances on a quantum Hall device [(GaAs(7)] which has been used as a resistance standard at NIST. We find a simple power law relationship between the change in Hall resistance and the longitudinal resistance as the temperature is varied between 1.4 K and 36 K. This power law holds over seven orders o...

The quantum anomalous Hall (QAH) effect in magnetic topological insulators is driven by the combination of spontaneous magnetic moments and spin-orbit coupling. Its recent experimental discovery raises the question if higher plateaus can also be realized. Here, we present a general theory for a QAH effect with higher Chern numbers and show by first-principles calculations that a thin film magne...

The current distribution is studied for a finite-width two-dimensional system of Hall electrons, with a clear distinction drawn between the equilibrium edge current and the Hall current. It is pointed out that both the distribution and direction of the equilibrium edge current change dramatically as the number of electron edge states increases, and that this alternating edge current is another ...

The influence of inelastic relaxation time on the intrinsic spin Hall effects in a disordered two-dimensional electron gas with Rashba interaction is studied; we clarify the controversy as regards impurity effects in the system. We reveal that, due to the existence of inelastic scattering, the spin Hall conductivity does not vanish when the impurity concentration diminishes to zero, regardless ...

At low temperatures, two-dimensional electron systems in a perpendicular magnetic field exhibit remarkable quantum phenomena [1]. The strongly correlated electrons stabilize in different quantum phases as the quantum Hall filling factor is varied. In this work, we present finite-size Monte Carlo simulation results for anisotropic quantum Hall liquid states observed at certain even-denominator q...

The rule relating the observed Hall coefficient to the spin and charge responses of the uniform doped Mott insulator is derived. It is essential to include the contribution of holon and spinon three-current correlations to the effective action of the gauge field. In the vicinity of the Mott insulating point the Hall coefficient is holon dominated and weakly temperature dependent. In the vicinit...

The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scatterin...

We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As ...

Intrinsic and extrinsic spin Hall effects are considered together on an equal theoretical footing for the Rashba spin-orbit coupling in two-dimensional 2D electron and hole systems, using the diagrammatic method for calculating the spin Hall conductivity. Our analytic theory for the 2D holes shows the expected lowest-order additive result for the spin Hall conductivity. But, the 2D electrons ma...

We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the nu=2 and the nu=1 quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We...