Semiconductor flash memory is an indispensable component of modern electronic systems. The minimum feature size of an individual CMOSFET has shrunk to 15nm with an equivalent gate oxide thickness (EOT) of 0.8nm in 2001. However, semiconductor flash memory scaling is far behind CMOS logic device scaling. For example, the EOT of the gate stack in semiconductor flash memory is still more than 10nm...

Eudialyte-group minerals are of scientific interest as important concentrators rare elements (mainly Zr and REE) in agpaitic alkaline rocks a potential source REE, Zr, Hf, Nb, Ta for industrial use. Extraction uranium(VI), thorium(IV), zirconium(IV), hafnium(IV), titanium(IV), scandium(III) by binary extractant based on 1,5-bis[2-(hydroxyethoxyphosphoryl)-4-ethylphenoxy]-3-oxapentane methyl tri...

The oxygen vacancy-related polaron-like bound state migration in HfOx accounting for the observed transport properties in the high resistance state of resistive switching is investigated by the density functional theory with hybrid functional. The barrier of hopping among the threefold oxygen vacancies is strongly dependent on the direction of motion. Especially, the lowest barrier along the <0...

In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...

Evaporated optical coatings fabricated from hafnium dioxide and silicon dioxide are the standard approach for high-peak-power laser components due to the high laser damage resistance of such coatings and the ability to deposit on largeaperture substrates. The tensile film stresses of such coatings may lead to failure, however, particularly in low-relative-humidity purged or vacuum use environme...

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

Hafnium oxide non-volatile memories have shown promise as an artificial synapse in neuromorphic computing architectures. However, there is still a need to fundamentally understand how reliably control the analog resistance change induced by oxygen ions that partially rupture or re-form conductive filament. In this work, impact of measurement conditions (pulse amplitude and pulse width) titanium...

Bismuth telluride (Bi2Te3) and related compounds have recently attracted strong interest, owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these materials are particularly interesting from the physics point of view. We report results of the micro-Raman spectroscopy study of the “graphene-like” exfoliated few-q...

The recent experimental observation of collective rotational bands up to I > 60h̄ in 175Hf presents theoretical challenges. It is shown here that total Routhian surface calculations are able to explain the yrast high-spin behavior, with collective oblate states favored at I ∼ 35h̄ and strongly deformed prolate states at the highest spins. The collective oblate rotation terminates in noncollective...

Estimates for the martian core formation timescale based on the hafnium–tungsten (Hf–W) isotopic system have varied by almost an order of magnitude, because of uncertainties in the martian mantle Hf/W ratio. Here we argue that the Hf/W ratio is ∼4 but is uncertain by ∼25%, resulting in (instantaneous) martian core formation timescales ranging from 0 to 10 Myr; accordingly, Hf–W isotope observat...