We developed an asynchronous spiking photonic neuron that forms the basic building block for hybrid analog/digital lightwave neuromorphic processing. Our approach enables completely asynchronous spiking in response to input signals while maximizing the throughput relative to synchronous approaches. Asynchronous operation is achieved by generating the spike source for the photonic neuron through...

A series of antimony-doped Ba(8)Ga(16)Ge(30) clathrates was grown as large crystals from gallium flux. These compounds form in the cubic space group Pm(-)3n, with the unit cell parameter varying from 10.784(5) to 10.9008(6) A as the amount of GaSb substituting for germanium atoms in the framework is increased. It was found that more antimony than extra gallium was incorporated into the material...

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We discuss the various electronic configurations one can use to readout resistive bolometers such as those based on Neutron Transmuted Doped Germanium thermometers (so called NTD Ge thermometers)[1] or NbSi thin film thermometers [2, 3]. The simple voltage amplifier configuration, is compared to readout configurations with feedback on the bolometer. Using the adiabatic thermal model of bolomete...

Phase change memory (PCM) has opportunities of various applications on the premise of its high performance operations, which are still to develop with innovations such as change of a memorymaterial. In respects of high-speed and high-scalability memory characteristics, d-phase Ge-doped SbTe (GeST) materials stand as highly promising candidates. An overview of the material and device characteris...

Raman laser generation at the long wavelength transmission edge of silica fiber is explored. Numerical simulation reveals that high efficiency 2nd Stokes Raman laser operation around 2.5 μm is feasible with highly Ge-doped silica fiber as the gain medium and pulsed 2-μm fiber laser as the pump source. Based on the spontaneous cascaded Raman amplification process, 0.30-W laser at 2.43 μm is obta...

The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD...

Using the methods of Auger electron and photoelectron spectroscopy light absorption spectroscopy, composition, densities state electrons in valence band, parameters energy bands Ge (111) implanted with Na+ ions an E0 = 0.5 keV at a dose D Dsat 6·1016 cm-2 thin layer NaGe2 obtained by heating ion-implanted Ge. It is shown that narrow n-type band (~0.2 eV) appears spectrum after ion implantation ...

One of the most fascinating applications of chalcogenide glasses is related to the formation of nanoionic conductive bridge nonvolatile memory. It is realized in programmable metallization cell (PMC) memory devices, which utilize the oxidation and reduction of nanoscale quantities of metal ions in solid electrolyte films. The formation of a robust but reversible conducting pathway by way of ele...