This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel...

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1 x yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1 xGex gate...

In the depletion approximation for n-channel MOS structures we have neglected the electrons beneath the gate electrode when the gate voltage is less than the threshold voltage, VT. We said that it is only when the gate voltage is above threshold that they are significant, and that they are then the dominant negative charge under the gate. Furthermore, we say that above threshold all of the gate...

High performance PMOSFETs with a gate length as short as 18-nm are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect. The 45 nm gate-length PMOS FinFET has an Idsat of 410 PA/Pm (or 820 PA/Pm depending on the definition of the width of a double-gate device) at Vd = Vg = 1.2 V and Tox = 2.5 nm. The quasi-planar nature of this variant of t...

Many container terminals all over the world strive to be mega-hub port through improving efficiency of terminal operation with high technology. Not only operating equipments in container terminal, but also container terminal gates are introducing state-of-the-art technologies in order to develop an effective gate system. This study focuses on an automation of identification task at gate. We dev...

complementary metal-oxide semiconductor (cmos) technology has been the industry standard to implement very large scale integrated (vlsi) devices for the last two decades. due to the consequences of miniaturization of such devices (i.e. increasing switching speeds, increasing complexity and decreasing power consumption), it is essential to replace them with a new technology. quantum-dot cellular...

o bjectives: the aim of this study was to evaluate marginal adaptation of mineral trioxide aggregate (mta), calcium enriched mixture (cem) cement, biodentine and bioaggregate in presence of normal saline and human blood. materials and methods: in this in-vitro experimental study, 80 extracted single-rooted human teeth were instrumented and filled with gutta-percha. after resect- ing the root-en...

Introduction: The main advantage of using ion beams over photons in radiotherapy is due to their inverse depth-dose profiles, allowing higher doses to tumors, while better sparing normal tissues. When calculating dose distributions with ion beams, one crucial point is the uncertainty of the Bragg-peak range. Recently great effort is devoted to enhance the accuracy of the comput...