The cascode NMOS architecture has been tested by the Human Body Model (HBM), Machine Model (MM) and Transmission Line Pulse Generator (TLP) in this paper. For the TLP, detailed silicon data have been analyzed well in many parameters, such as the first triggeringon voltage (Vt1), the first triggering-on current (It1), the holding voltage (Vh), and the TLP I-V curve. Besides the above three kinds...

|In this paper we present a Low Voltage Diierential Current Switch Logic (LVDCSL) gate which is capable of achieving high performance for large fan-in gates. High fan-in is enabled by allowing large stacked NMOS tree heights using a pre-discharged NMOS tree, at the same time the power penalty of an increased number of internal nodes in the gate is mitigated by restricting internal node voltage ...

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ...

In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...

Lidocaine produces voltage- and use-dependent inhibition of voltage-gated Na+ channels through preferential binding to channel conformations that are normally populated at depolarized potentials and by slowing the rate of Na+ channel repriming after depolarizations. It has been proposed that the fast-inactivation mechanism plays a crucial role in these processes. However, the precise role of fa...

Submitted for the MAR13 Meeting of The American Physical Society Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage1 GUOJUN JIN, XUECHAO ZHAI, Nanjing University — We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interacti...

We have studied charge transport through single molecules covalently bound to two gold electrodes in electrolytes by applying a voltage between the two electrodes and a reference electrode (gate). This electrochemical gating can effectively control the current through the molecules, depending on the electronic properties of the molecules. For electrochemically inactive molecules, such as 4,4'-b...

In this study, we present selected reliability issues of double gate dielectric stacks for non-volatile semiconductor memory (NVSM) applications. Fabricated gate structures were consisted of PECVD silicon oxynitride layer (SiOxNy) as the pedestal layer and hafnium dioxide layer (HfO2) as the top gate dielectric. In the course of this work, obtained MIS structures were investigated by means of c...

We study the spin and valley dependent transport in a silicene superlattice under the influence of a magnetic exchange field, a perpendicular electric field and a voltage potential. It is found that a gate-voltage-controllable fully spin and valley polarized current can be obtained in the proposed device, and the spin and valley polarizations are sensitive oscillatory functions of the voltage p...

In voltage-gated channels, ions flow through a single pore located at the interface between membrane-spanning pore domains from each of four subunits, and the gates of the pore are controlled by four peripheral voltage-sensing domains. In a striking exception, the newly discovered voltage-gated Hv1 proton channels lack a homologous pore domain, leaving the location of the pore unknown. Also unk...