We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simul...

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors sFETsd. We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even wh...

The aggressive down-sizing of device dimensions and voltage margins has left little room for transistor degradation, so in addition to dealing with PVT variations, a detailed understanding of numerous aging processes generally studied by device scientists is needed at the circuit and system levels. In this paper, we describe a number of circuit methods to efficiently monitor accelerated device ...

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency ope...

Abstract: Improvement of Hf-based high-k gate dielectrics by incorporating Ta and La in HfO2 are investigated systematically. The main issues of pure HfO2 gate dielectric, including low crystallization temperature, channel mobility degradation, and bias temperature instability (BTI) degradation, can be effectively improved in HfTaO and HfLaO. Particularly, HfLaO with appropriate metal gate mate...

Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation ...

A triple metal double gate (TM-DG) MOSFET with high-k dielectrics has been proposed to overcome the short channel effects. We are using top and bottom metal gates with different work functions to screen the effect of drain (DIBL effect). It has been found that this is effective in reducing the short channel effects. The metal gates have been used to remove the poly silicon depletion of conventi...

We demonstrate active voltage-controlled spectral tuning of mid-infrared plasmonic structures. Extraordinary optical transmission gratings were fabricated on n-doped GaAs epilayers with a HfO2 gate dielectric between the grating and the doped semiconductor. The permittivity of the GaAs was tuned by depleting charge carriers below the top grating gate upon the application of a reverse bias to th...

The bulk MOSFET scaling has recently encountered significant limitations, mainly related to the gate oxide (SiO2) leakage currents (Gusev et al., 2006; Taur et al., 1997), the large increase of parasitic short channel effects and the dramatic mobility reduction (Fischetti & Laux, 2001) due to highly doped Silicon substrates precisely used to reduce these short channel effects. Technological sol...