نتایج جستجو برای: gate

تعداد نتایج: 42907  

Journal: :The Journal of General Physiology 1997
Michael Pusch Uwe Ludewig Thomas J. Jentsch

The chloride channel from the Torpedo electric organ, ClC-0, is the best studied member of a large gene-family (Jentsch, T.J. 1996. Curr. Opin. Neurobiol. 6:303-310.). We investigate the temperature dependence of both the voltage- and chloride-dependent fast gate and of the slow gate of the "double-barreled" ClC-0 expressed in Xenopus oocytes. Kinetics of the fast gate exhibit only a moderate t...

2001
Supratik Chakraborty Rajeev Murgai

Gate resizing for minimum circuit delay is a fundamental problem in the performance optimization of gate-level circuits. In this paper , we study the complexity of two diierent minimum-delay gate resizing problems for combinational circuits composed of single-output gates. The rst problem is that of gate resizing for minimum circuit delay under the load-dependent delay model. The second problem...

2005
Tezaswi Raja Vishwani D. Agrawal Michael L. Bushnell

The time taken for a CMOS logic gate output to change after one or more inputs have changed is called the output delay of the gate. A conventional multi-input CMOS gate is designed to have the same input to output delay irrespective of which input caused the output to change. A gate which can offer different delays for different input-output paths through it, is known as a v ̄ ariable input dela...

Journal: :Physics in medicine and biology 2004
S Jan G Santin D Strul S Staelens K Assié D Autret S Avner R Barbier M Bardiès P M Bloomfield D Brasse V Breton P Bruyndonckx I Buvat A F Chatziioannou Y Choi Y H Chung C Comtat D Donnarieix L Ferrer S J Glick C J Groiselle D Guez P F Honore S Kerhoas-Cavata A S Kirov V Kohli M Koole M Krieguer D J van der Laan F Lamare G Largeron C Lartizien D Lazaro M C Maas L Maigne F Mayet F Melot C Merheb E Pennacchio J Perez U Pietrzyk F R Rannou M Rey D R Schaart C R Schmidtlein L Simon T Y Song J M Vieira D Visvikis R Van de Walle E Wieërs C Morel

Monte Carlo simulation is an essential tool in emission tomography that can assist in the design of new medical imaging devices, the optimization of acquisition protocols and the development or assessment of image reconstruction algorithms and correction techniques. GATE, the Geant4 Application for Tomographic Emission, encapsulates the Geant4 libraries to achieve a modular, versatile, scripted...

2012
Yi Zhao

High permittivity (k) gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a hig...

2005
Naoshi Uchihira

This paper analyzes an actual business-academia collaborative project from the viewpoint of stage gate approach (we call this approach “stage gate analysis”). Stage gate analysis is a method of reviewing a finished project and summarizing it, whereas conventional stage gate management is used to control an on-going project. The case study analyzed is a project undertaken over a period of 6 year...

2006
Patrick M. Leung Timothy C. Ralph

We have modeled the Zeno effect controlled-sign gate of Franson et al. Phys. Rev. A 70, 062302 2004 and shown that high two-photon to one-photon absorption ratios, , are needed for high fidelity free-standing operation. Hence we instead employ this gate for cluster state fusion, where the requirement for is less restrictive. With the help of partially offline one-photon and two-photon distillat...

2015
Ilias Katsouras Dong Zhao Mark-Jan Spijkman Mengyuan Li Paul W. M. Blom Dago M. de Leeuw Kamal Asadi

The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memo...

Journal: :Physical review letters 2004
J L O'Brien G J Pryde A Gilchrist D F V James N K Langford T C Ralph A G White

We demonstrate complete characterization of a two-qubit entangling process--a linear optics controlled-NOT gate operating with coincident detection--by quantum process tomography. We use a maximum-likelihood estimation to convert the experimental data into a physical process matrix. The process matrix allows an accurate prediction of the operation of the gate for arbitrary input states and a ca...

2002
PREDRAG HABAS

A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C-V characteristic is quantitativ...

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