Abstract High Electron Mobility Transistors (HEMT) made of aluminum gallium nitride/gallium nitride (AlGaN/GaN) have become a major focus for all electronic devices based on due to its excellent system characteristics. AlGaN/GaN HEMTs severe problems that degrade their performance and the drain current collapse (CC) is one them. During switching operations, CC increases on-resistance (R ON ) le...

Heteroepitaxial crystallographic tilt has been investigated as a possible strain-relief mechanism in Al-rich (Al>50%) AlGaN heteroepitaxial layers grown on single-crystal (0001) AlN substrates with varying miscuts from 0.05° to 4.30°. The magnitude of the elastic lattice deformation-induced increases monotonically miscut angle, tightly following Nagai model. Although angles high 0.1° are record...

A turn-on fluorescence sensor, Cu(2+)-c-mpg-C(3)N(4), was developed for detection of CN(-) in aqueous solution by simply mixing cubic mesoporous graphitic carbon nitride (c-mpg-C(3)N(4)) and aqueous solution of Cu(NO(3))(2). The highly sensitive detection of CN(-) with a detection limit of 80 nM is not only possible in aqueous solution but also in human blood serum.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The...