Measurements were carried out on radio-frequency magnetron-sputtered amorphous and microcrystalline gallium-arsenide (GaAs) films, which were fabricated under various sputtering conditions such as annealing temperature (up to 450˚C), substrate temperature (up to 200˚C), sputtering pressure (up to 20 mTorr), rf sputtering power (up to 800 W), and hydrogen partial pressure (25% H 2 in a mixture w...

Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...

Important challenges remain in the development of ultrafast laser writing inside semiconductor materials because properties narrow gap cause strong propagation distortions to intense infrared light. Here, we introduce a simple and robust imaging method for high-dynamic-range investigations laser–matter interactions bulk semiconductors. Supported by measurements gallium arsenide silicon, show ho...

The purpose of this study was to assess the topic use Sebastiania hispida extract and low-level gallium-arsenide laser irradiation (GaAs, 904 nm) reduce local myonecrosis edema Bothrops moojeni snake venom-injected gastrocnemius. Wistar rats receiving intramuscular venom injection (VBm) were compared with saline control (S) envenomed exposure plant (VExt) or (VL). phytochemistry thin-layer chro...