Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH ...

Wurtzite gallium nitride nanostructures were grown by thermal reaction of gallium oxide and ammonia. The resulting morphology varied depending on ammonia flow rate. At 75 sccm only nanowires were obtained, while polyhedral crystals and nanobelts were observed at 175 sccm. Scanning electron microscopy and transmission electron microscopy revealed both thin smooth and thick corrugated nanowires. ...

Gallium-67 (67Ga) scanning was assessed for its usefulness in the evaluation and follow-up of 54 patients with sarcoidosis, both treated and untreated. Scans were repeated in 23 subjects. Serum levels of angiotensin-converting enzyme (ACE) were determined concurrently in all 54 patients and bronchoalveolar lavage was performed in 29 patients. Gallium-67 scan was effective in the detection and a...

Fabrication of advanced artificial nanomaterials is a long-term pursuit to fulfill the promises of nanomaterials and it is of utter importance to manipulate materials at nanoscale to meet urgent demands of nanostructures with designed properties. Herein, we demonstrate the morphological tailoring of self-assembled nanostructures on faceted GaAs nanowires (NWs). The NWs are deposited on differen...

Tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) gallium-arsenide (GaAs) are demonstrated. These tunnel diodes achieve peak-to-valley current ratios as high as 22, a record negative-conductance-per-area of 1/226 Xlm, and a record peak current density of 16 kA/cm, all at room-temperature. 2004 Elsevier Ltd. All rights reserved. PACS: 72.20.H; 73.50.F; 85.30.M; 71.55.E; 73.61.E;...

Chemical vapor deposition (CVD) using gold nanoparticles as the catalyst to grow high-quality single-crystal gallium nitride nanowires was developed. This method enables control over several important aspects of the growth, including control of the nanowire diameter by using monodispersed gold clusters, control of the nanowire location via e-beam patterning of the catalyst sites, and control of...

Gallium maltolate, tris(3-hydroxy-2-methyl-4H-pyran-4-onato)gallium (GaM), is an orally active gallium compound for therapeutic use. It is moderately soluble in water (10.7 +/- 0.9 mg/mL at 25 composite functionC) with an octanol partition coefficient of 0.41+/-0.08. The molecule is electrically neutral in aqueous solution at neutral pH; a dilute aqueous solution (2.5 x10-(-5) M) showed little ...

A 26 year-old female was admitted with abdominal pain, fever and weight loss. The clinical and laboratory investigations led to the diagnosis of paracoccidioidomycosis. Gallium-67 whole body images correlated well with the clinical course of the disease and with the patient's prognosis.

A new approach is introduced to significantly improve the performance of thermophotovoltaic (TPV) systems using low-dimensional thermal emitters and photovoltaic (PV) cells. By reducing the thickness of both the emitter and the PV cell, strong spectral selectivity in thermal emission and absorption can be achieved by confining photons in trapped waveguide modes inside the thin-films that act as...

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect ...