Based on the study of photoconductivity in GaAs / AlAs p-i-n heterostructures visible light range, dominant role diffusion channel photoexcited electrons from heavily doped layers formation photocurrent oscillations bias voltage and determining contribution this to total current through structure is shown. A qualitative model transport excited carriers considered, which assumes as main source p...

C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property beneficial to photoemission. To clarify stability and efficiency during Cs/O activation, gradient concentration of Cs adsorption co-adsorption models are established. The work function, energy, surface dipole moment intensified by first principles calculation based on de...

We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15 K, by comparison with undoped layers grown in t...

Resonant transport is demonstrated in a hybrid superconductorsemiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic A...

We report on a controlled ambient annealing technique aimed at increasing the amount of Mn incorporation in III–V semiconductors. The aim is to reduce the number of hole carrier and magnetic element compensating entities, such as Mn interstitials and anti-site defects, to increase the magnetic Curie temperature. The idea is (a) to increase the number of Group III vacancies through annealing in ...

The electron dynamics in modulation p-doped InGaAs/GaAs self-assembled quantum dots have been studied by time-integrated and time-resolved upconversion photoluminescence. A significant state filling effect is observed with exclusion of the phonon bottleneck effect. The rise time and decay time are found to vary with the excitation intensity for the ground state and excited states of the quantum...

We present the static operation properties of monolithically integrated 850 nm wavelength AlGaAs/GaAs-based vertical-cavity surface-emitting lasers (VCSELs) and PIN (p-doped– intrinsic–n-doped) photodiodes (PDs). Devices with three different epitaxial layer structures of the PDs are investigated. PDs with a 3μm thick intrinsic region show a responsivity of > 0.6A/W and have the lowest dark curr...

It is well known that the magnetic anisotropy in a compressively strained Mn-doped GaAs film changes from perpendicular to parallel with increasing hole concentration p. We study this reorientation transition at T=0 in a quantum well with delta-doped Mn impurities. With increasing p, the angle theta that minimizes the energy E increases continuously from 0 (perpendicular anisotropy) to pi/2 (pa...

We report the monolithic integration, fabrication, and electro-optical properties of AlGaAs– GaAs-based transceiver (TRx) chips for 850 nm wavelength optical links with data rates of multiple Gbit/s. Avoiding the use of external fiber coupling optics and using a single buttcoupled multimode fiber (MMF) with 50 or 62.5μm core diameter, low-cost bidirectional communication in halfand even full-du...

Abstract Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm 2 V s ?1 if the AlGaAs alloy is grown after GaAs. Surprisingly, may drop to a few millions for identical but inverted AlGaAs/GaAs interface, i.e. reversed layering. Here we report on series heterostructures with varying growth paramete...