Conventionally, DC arc furnaces are fed by thyristor rectifiers to control the level of current or power transferred load. With advancement high-power transistors, other structures such as diode and choppers have been introduced developed for feeding system electric furnaces. In this paper, effect different supply systems on quality indexes is discussed. regard, two types considered, including ...

A SPICE model for the microwave and RF PIN switching diode is presented. The model simulates the important Iregion charge storage phenomenon and its effect on the PIN diode impedance-frequency characteristic. The SPICE model is described and validated by comparisons with both analytical and measured results.

Introduction: In electron beam treatment, because of the non-point electron beam source, inverse-square law cannot be applied for dosimetry in different treatment intervals. Therefore, providing source-surface distance (SSD) charts in all clinics is of paramount importance. This study aimed to determine the effective SSD for various electron beam energies and field sizes and to...

n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces a...

<div align="left"><span>The grid interconnected application systems require high voltage levels which leads to an efficiency reduction. To overcome this, a new gain boost converter in association with buffer capacitor, passive clamp recovery circuit restore leakage energy coupled inductor is presented. The magnetic field of the linked stores obtained from supply. transmitted connect...

Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated na...

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating volta...

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization ...

We investigate experimentally the influence of the grating reflectivity, grating resolution, and diode facet antireflection (AR) coating on the intrinsic linewidth of an external-cavity diode laser built with a diffraction grating in a Littrow configuration. Grating lasers at 399, 780, and 852 nm are determined to have typical linewidths between 250 and 600 kHz from measurements of their freque...