The effect of film thickness on the structural- and electrical-properties is investigated in Co 2 FeAl 0.5 Si (CFAS) thin films thickness, t, range 12–75 nm. These are grown by ultrahigh vacuum dc magnetron sputtering Si(100) substrates with SiO buffer layer (300 nm), at substrate temperature 500 ◦ C. GIXRD patterns reveal that B2 structural order decreases increasing t. t = 75 nm has sizable A...
