Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

Quantitative results from infrared laser absorption spectroscopy ~IRLAS! of CF and CF2 radicals and COF2 products in inductively coupled plasmas fed with C2F6, CHF3 and C4F8 are presented and compared with results simultaneously obtained by mass spectrometry and optical emission spectroscopy. These plasma gas-phase analysis results are discussed and compared to fluorocarbon deposition and etchi...

Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the u...

Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a su7ciently accurate measure of the thickness. For example, the bulk etc...

A new cost-effective and efficient approach is proposed for texturing the crystalline silicon using the gas lift effect (GLE). The advantages of this approach over the conventional ones are that significantly lower amounts of IPA is used and much shorter etching time is required to achieve the same reflectivity. GLE is generated by taking advantage of the hydrogen bubbles evolved between the si...

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF(6), optimized for the formation of deep nanopores. We have realized structures with pitches between 440 ...

Wafer-to-wafer process reproducibility during plasma etching often depends on the conditioning of the inside surfaces of the reactor. Passivation of reactor surfaces by plasma generated species, often called seasoning, can change the reactive sticking coefficients of radicals, thereby changing the composition of the radical and ion fluxes to the wafer. Ion bombardment of the walls may influence...

During the oxide layer etching process, particles in capacitively coupled plasma equipment adhere to wafer edge and cause defects that reduce yield from semiconductor wafers. To particle contamination equipment, we propose changes voltage temperature of electrostatic chuck, discharge sequence, gas flow, pressure parameters during process. The proposed reduction method was developed by analyzing...

Recently, self-etching adhesive system has been introduced to simplify the clinical bonding procedures. It is less acidic compared to the phosphoric acid, thus there is doubt whether this system has enough bond strength to enamel. The purpose of this study was to investigate the influence of additional etching on the adhesion of resin composite to enamel. Ninety extracted bovine permanent anter...

Micro- and nanodisk lasers have emerged as promising optical sources probes for on-chip free-space applications. However, the randomness in disk diameter introduced by standard nanofabrication makes it challenging to obtain deterministic wavelengths. To address this, we developed a photoelectrochemical (PEC) etching-based technique that enables us precisely tune lasing wavelength with subnanome...