A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present...

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type (Si) wafers to generate for with an orientation of (111) The results time investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface sample sheet and synthesized silicon. largest crystal size is (30 nm) lowest (28.6 analysis Atomic Force Microscopy ...

Dynamic etching methods for fabricating fibre optic tips are explored and modelled. By vertically translating the fibre during etching by an HF solution under an organic protective layer, a variety of tip shapes were created. The probe taper lengths, cone angles and geometrical probe shapes were measured in order to evaluate the dynamic meniscus etching process. Fibre motion, etching rate, meni...

Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman sca...

We present a fast, novel method for building porous silicon-based silicon-on-insulator photonic crystals in which a periodic modulation of the refractive index is built by alternating different electrochemical etching currents. The morphology and reflectance spectra of the photonic crystals, prepared by the proposed method, are investigated. The scanning electron micrograph and atomic force mic...

A straightforward metal-particle-induced, highly localized site-specific corrosion-like mechanism was proposed for the formation of aligned silicon-nanowire arrays on silicon in aqueous HF/AgNO3 solution on the basis of convincing experimental results. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nano...

We propose a dual scale drift-diffusion model for interfacial growth and etching processes. The two scales are: (i) a depletion layer width ∆W surrounding the aggregate and (ii) a drift length l. The interplay between these two antithetical scales yields a variety of distinct morphologies reported in electrochemical deposition of metals, viscous fingering in fluids and in porous silicon formati...

We have studied the effect of oxidation on the propagation loss and surface roughness of silicon-on-oxidized-porous-silicon strip waveguides fabricated using proton-beam irradiation and electrochemical etching. A thin thermal oxide is formed around the core of the waveguide, enabling the symmetric reduction of core size and roughness on all sides. Significant loss reduction from about 10 dB/cm ...

: In this work, a new approach for the one-step integration of interdigitated electrodes on macroporous silicon substrates is presented. Titanium/gold interdigitated electrodes are used to pattern p-type silicon substrates prior the anodization in an organic electrolyte. The electrolyte characteristics, conductivity, and pH have been found to affect the adherence of the metal layer on the silic...

The growing demand for electro mobility together with advancing concepts for renewable energy as primary power sources requires sophisticated methods of energy storage. In this work, we present a Li ion battery based on Si nanowires, which can be produced reliable and cheaply and which shows superior properties, such as a largely increased capacity and cycle stability. Sophisticated methods bas...