Efficient interfacial carrier generation in van der Waals heterostructures is critical for their electronic and optoelectronic applications. We demonstrate broadband photocarrier generation in WS2-graphene heterostructures by imaging interlayer coupling-dependent charge generation using ultrafast transient absorption microscopy. Interlayer charge-transfer (CT) transitions and hot carrier inject...

The drift mobility for electrons and holes, small-signal mobility lifetime product, trapped-carrier density of states in addition to other correlated physical parameters of microcrystalline silicon sample are estimated from the analysis of fielddependent experimental data using steady-state photocarrier grating technique. The filed-dependent experimental data at room temperature of the sample w...

The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient a2 and refractiv...

GaAs/AlGaAs quantum wells ~QWs!, selectively disordered using an AlAs native oxide and thermal annealing technique, were studied using spectrally, spatially, and temporally resolved cathodoluminescence ~CL!. The spectral shift of the QW luminescence was determined as a function of annealing temperature in the oxide and nonoxide regions. Time-resolved CL was used to assess the impact of defects ...

A new model for incomplete ionization of dopants in Si is presented, where the Fermi level free carriers may displace with respect to case full activation dopants. The curves ratio free-carrier density and active-dopants vs doping, which are calculated at partial model, overlap exactly same quantity a reported model. Calculations performed without parameterizations states occupancy probability ...

The formation of boron-oxygen complexes in boron-doped crystalline silicon can lead to a severe reduction in the minority charge carrier lifetime. This strongly influences, e.g., solar cell efficiencies if the material is used for photovoltaic application. Recent investigations have shown that a recovery of the carrier lifetime can be achieved by a subsequent thermally enhanced reaction induced...

The influence of solvent additives on the temperature behavior of both charge carrier transport and recombination kinetics in bulk heterojunction solar cells has been investigated by electric noise spectroscopy. The observed differences in charge carrier lifetime and mobility are attributed to a different film ordering and donor-acceptor phase segregation in the blend. The measured temperature ...

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