At present, an important issue is to dispose of electrical models describing the interplay between the observed phenomenology in CNT-FETs. These models are intended to serve as guidelines for the design and projection of CNT-FET performances. In this work we propose a physics-based model for CNT-FETs for computing the transfer and output characteristics. The model captures the observed phenomen...

N-face AlGaN (cap)/GaN (channel)/AlGaN (barrier)/GaN (buffer) high electron mobility transistors (HEMTs) provide a simple solution for strong confinement of the two-dimensional electron gas (2DEG) from the back since carriers are induced on top of the AlGaN barrier. To reduce the adverse effects of random alloy scattering from the AlGaN barrier, an N-face GaN-spacer HEMT was designed with an ep...

Crowdsensing has the potential to support human-driven sensing and data collection at an unprecedented scale. While many organizers of data collection campaigns may have extensive domain knowledge, they do not necessarily have the skills required to develop robust software for crowdsensing. In this paper, we present Mobile Campaign Designer, a tool that simplifies the creation of mobile crowdse...

We present a hierarchical approach to the “atomistic” simulation of aggressively scaled sub-0.1m MOSFET’s. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional driftdiffusion atomistic simulation approach is first described and used to verify more economical, but restri...

Quantum chemical calculations are used to assess various means of lowering the barrier for the dyotropic rearrangement previously proposed to occur during the carbocation rearrangement process promoted by pentalenene synthase. Several means of lowering this barrier, including a stepwise pathway for dyotropic rearrangement, are uncovered.

The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due surrounding architecture built on fundamental geometry MOSFET made them highly compatible existing CMOS circuit applications. announcement vertically stacked multiple structure named as Ribbon-FET I...

We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near ...

BACKGROUND Recent clinical trials have established that inhibitors of the enzyme 3-hydroxy-3-methylglutaryl coenzyme A reductase (statins) reduce the risk of acute coronary events. These effects of statins cannot be fully explained by their lipid-lowering potential. Improved endothelial function may contribute to the positive effects of statin treatment. METHODS AND RESULTS In the present stu...

We studied a molecular junction with arylalkane self-assembled monolayers sandwiched between two graphene contacts. The arrangement of graphene-based junctions provides stable device structure high yield and allows for extensive transport measurements at 78 K. observed temperature-independent current density–voltage (J–V) characteristic the exponential dependency density on length, proving that...