نتایج جستجو برای: doping control

تعداد نتایج: 1353503  

2011
Miran Kondric Damir Sekulic Andrea Petroczi Ljerka Ostojic Jelena Rodek Zdenko Ostojic

BACKGROUND Racket sports are typically not associated with doping. Despite the common characteristics of being non-contact and mostly individual, racket sports differ in their physiological demands, which might be reflected in substance use and misuse (SUM). The aim of this study was to investigate SUM among Slovenian Olympic racket sport players in the context of educational, sociodemographic ...

2014
M. Nakajima S. Ishida T. Tanaka K. Kihou Y. Tomioka T. Saito C. H. Lee H. Fukazawa Y. Kohori T. Kakeshita A. Iyo T. Ito H. Eisaki S. Uchida

In high-transition-temperature superconducting cuprates and iron arsenides, chemical doping plays an important role in inducing superconductivity. Whereas in the cuprate case, the dominant role of doping is to inject charge carriers, the role for the iron arsenides is complex owing to carrier multiplicity and the diversity of doping. Here, we present a comparative study of the in-plane resistiv...

2017
Jonna Hynynen David Kiefer Liyang Yu Renee Kroon Rahim Munir Aram Amassian Martijn Kemerink Christian Müller

Molecular p-doping of the conjugated polymer poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) is a widely studied model system. Underlying structure-property relationships are poorly understood because processing and doping are often carried out simultaneously. Here, we exploit doping from the vapor phase, which allows us to disentangle the influe...

Journal: :ACS nano 2012
Oleksandr Voznyy David Zhitomirsky Philipp Stadler Zhijun Ning Sjoerd Hoogland Edward H Sargent

We present a framework--validated using both modeling and experiment--to predict doping in CQD films. In the ionic semiconductors widely deployed in CQD films, the framework reduces to a simple accounting of the contributions of the oxidation state of each constituent, including both inorganic species and organic ligands. We use density functional theory simulations to confirm that the type of ...

2004
U. V. Desnica

Wide-band-gap II-VI semiconductors have a potential for a variety of applications especially in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar cells), X-ray and "t--ray detection, etc. In all applications, a good bipolar electrical conduction, i.e. efficient doping from both nand p-side is essential, but due to the reasons which are not yet fully underst...

2013
Mazen El-Hammadi

This study aimed to assess pharmacy students’ knowledge about doping substances used in sport, explore their attitudes toward doping and investigate their misuse of doping drugs. A questionnaire was developed and employed to collect data from bachelor of pharmacy (BPharm) students at the International University for Science and Technology (IUST). Two-hundred and eighty students participated in ...

Journal: :Nanotechnology 2014
Jyothi S Sadhu Hongxiang Tian Timothy Spila Junhwan Kim Bruno Azeredo Placid Ferreira Sanjiv Sinha

Top-down electroless chemical etching enables non-lithographic patterning of wafer-scale nanostructured arrays, but the etching on highly doped wafers produces porous structures. The lack of defect-free nanostructures at desired doping and the difficulties in forming reliable electrical side-contacts to the nanostructure arrays limits their integration into high performance nanoelectronics. We ...

2016
Y. Kim Y. I. Jhon J. Park C. Kim S. Lee Y. M. Jhon

Monolayer MoS2 (1L-MoS2) has photoluminescence (PL) properties that can greatly vary via transition between neutral and charged exciton PLs depending on carrier density. Here, for the first time, we present a chemical doping method for reversible transition between neutral and charged excitons of 1L-MoS2 using chlorine-hydrogen-based plasma functionalization. The PL of 1L-MoS2 is drastically in...

1999
W. Q. Li P. K. Bhattacharya

The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2014
Takayoshi Katase Hidenori Hiramatsu Toshio Kamiya Hideo Hosono

A(1-x)Fe(2-y)Se2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel tran...

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