نتایج جستجو برای: dimensional fet model

تعداد نتایج: 2410851  

2012
Reinhold Graf Michail Plotkin Fonyuy Nyuyki Peter Wust Reinhard Wurm Volker Budach Winfried Brenner Daniel Fahdt

Increased amino acid uptake has been demonstrated in intracerebral tumours and head and neck carcinomas of squamous cell origin. We investigated the potential impact of using (18)F-fluoro-ethyl-tyrosine ((18)F-FET)-PET/CT in addition to conventional imaging for gross tumour volume (GTV) delineation in stereotactic radiotherapy of skull base tumours. The study population consisted of 14 consecut...

Journal: :The European respiratory journal 1997
J N Han K Stegen K Simkens M Cauberghs R Schepers O Van den Bergh J Clément K P Van de Woestijne

The breathing pattern of 399 patients with hyperventilation syndrome (HVS) and/or with anxiety disorders and that of 347 normal controls was investigated during a 5 min period of quiet breathing and after a 3 min period of voluntary hyperventilation. The diagnosis of HVS was based on the presence of several suggestive complaints occurring in the context of stress, and reproduced by voluntary hy...

2007
Bipul C Paul Ryan Tu Shinobu Fujita Masaki Okajima Thomas Lee Yishio Nishi

In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for I-V and C-V characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified w...

2011
H. Abebe E. Cumberbatch Marina del Rey

We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for ...

2011
Jari Kinaret Andrea C. Ferrari Vladimir Fal'ko Jani Kivioja

This session described the FET Flagship Pilot on graphene and related two-dimensional materials. The flagship targets a revolution in information and communication technology, with impacts reaching into other areas of the society. The session featured four talks on the scientific and technological potential and open research challenges within the scope of the proposed flagship, industrial view ...

Journal: :Silicon 2021

The dielectric pocket gate-all-around (DPGAA) MOSFET is being considered the best suited candidate for ULSI electronic chips because of excellent electrostatic control over channel. However, phenomena self-heating and hot carrier injection (HCI) severely affect performance device, make behaviour DPGAA FET very unpredictable. In present article, a comprehensive investigation under influence effe...

2015
J. U. Mehta

Using an idealized semianalytical model of charge transport for InAs-based tunneling FET, it is shown that the output and transfer characteristics can be accurately reproduced and could be used to develop compact models. The use of a mathematical approximation for the analytical solution of the surface potential is vital here to minimize the computation time. The 20-nm gate homojunction and 40-...

2014
Mette K. Nedergaard Karina Kristoffersen Signe R. Michaelsen Jacob Madsen Hans S. Poulsen Marie-Thérése Stockhausen Ulrik Lassen Andreas Kjaer

OBJECTIVES Brain tumor imaging is challenging. Although 18F-FET PET is widely used in the clinic, the value of 18F-FET MicroPET to evaluate brain tumors in xenograft has not been assessed to date. The aim of this study therefore was to evaluate the performance of in vivo 18F-FET MicroPET in detecting a treatment response in xenografts. In addition, the correlations between the 18F-FET tumor acc...

2004
Slava V. Rotkin Karl Hess

Novel type of a field effect transistor (FET) is described. A metallic channel of a metallic nanotube FET is proposed to be switched ON/OFF by applying electric fields of a local gate. Very inhomogeneous electric fields may lower the nanotube symmetry and open a band gap, as shown by tight–binding calculations.

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم 1391

مدلهای گارچ در فضاهای هیلبرت پایان نامه حاضر شامل دو بخش می باشد. در قسمت اول مدلهای اتورگرسیو تعمیم یافته مشروط به ناهمگنی واریانس در فضاهای هیلبرت را معرفی، مفاهیم ریاضی مورد نیاز در تحلیل این مدلها در دامنه زمان را مطرح کرده و آنها را مورد بررسی قرار می دهیم. بر اساس پیشرفتهایی که اخیرا در زمینه تئوری داده های تابعی و آماره های عملگری ایجاد شده است، فرآیندهایی که دارای مقادیر در فضاهای ...

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