A fully integrated pulsewidth modulator for Class-S power amplifiers is presented. It consists of a triangular signal generator, a comparator and output buffer. The HBT BiCMOS design of PWM circuit is applied to the LTE frequency range, which converts digitally modulated 955MHz RF carrier with 2.87GHz sampling clock. This PWM shows an EVM 6.6%, a differential output voltage swing 1.35Vp-p with ...

This paper presents a new compensation method for fully differential two-stage CMOS operational transconductance amplifiers (OTAs). It employs a hybrid cascode compensation scheme, merged Ahuja and improved Ahuja style compensations, for fast settling. A design procedure for minimum settling time of the proposed compensation technique for a two-stage class A/AB OTA is described. To demonstrate ...

Also the optical fiber amplifiers FAs that amplify weak signals such as the. Rare-Earth-Doped Fiber Lasers and Amplifiers, Michael J.F.Chapter 2. Optical and Electronic Properties of Rare Earth Ions in Glasses William J Miniscalco Abstract-HiRes PDF 2316 KB-PDF wlinks 2330 KB.amplifier materials in the system of rare-earth doped glasses are presented. rare-earth-doped ram concept manual pdf fib...

in this paper, we characterize multiresolution analysis(mra) parseval frame multiwavelets in l^2(r^d) with matrix dilations of the form (d f )(x) = sqrt{2}f (ax), where a is an arbitrary expanding dtimes d matrix with integer coefficients, such that |deta| =2. we study a class of generalized low pass matrix filters that allow us to define (and construct) the subclass of mra tight frame multiwav...

An Efficient Supply Modulator for Linear Wideband RF Power Amplifiers. (August 2011) Richard Turkson, B.Sc., Kwame Nkrumah University of Science and Technology Chair of Advisory Committee: Dr. Jose Silva-Martinez Radio Frequency (RF) Power Amplifiers are responsible for a considerable amount of the power consumption in the entire transmitter-receiver (transceiver) of modern communication system...

We present a detailed description of the methods used in our model of mode instability in high-power, rare earth-doped, large-mode-area fiber amplifiers. Our model assumes steady-periodic behavior, so it is appropriate to operation after turn on transients have dissipated. It can be adapted to transient cases as well. We describe our algorithm, which includes propagation of the signal field by ...

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, ...

Plasmon lasers are a new class of coherent optical frequency electromagnetic wave amplifiers that deliver intense, coherent and directional surface plasmons well below the diffraction barrier. The strongly confined electric fields in plasmon lasers can enhance significantly light-matter interactions and bring fundamentally new capabilities to bio-sensing, data storage, photolithography and opti...