Controllable etching and surface passivation of InP semiconductors are desirable for removing damaged surfaces and obtaining good electronic properties. We have observed that organic acids ~a-hydroxy acids: tartaric, lactic, citric, and malic!, when used in conjunction with HCl to etch the ~100! surface of InP results in smoother and defect-free surfaces, in comparison to etches based on inorga...

Fabrication, characterization and application of periodical ferroelectric domains in ridges and Ti in-diffused ridge waveguides on X- and Y-cut Lithium Niobate (LN) are reported. The ridge waveguides of 3.5 microm height and 9 microm width were fabricated by inductively coupled plasma (ICP) etching followed by Ti in-diffusion into the ridges only. Appropriate electrodes on their side walls enab...

: We have investigated the initial stage of hydrolysis process of Ga-terminated GaN surfaces by using first-principles theoretical calculations. We found that the activation barrier of H2O dissociation at the kinked site of the Ga-terminated GaN surface is about 0.8 eV, which is significantly lower than that at the stepped site of about 1.2 eV. This is consistent with the experimental observati...

In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, 'almost' through-silicon macropores were locally opened by a backside photolithographic process...

Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the do...

Atmospheric pressure air plasma has been used to treat grey cotton fabrics and the effect of treatment on their desizing and wettability properties is studied using the dielectric barrier discharge plasma with air and helium gas mixture. The weight loss due to etching has been determined by gravimetric method, the surface structure observed by SEM, the wettability studied by wicking action and ...

Controlled silicon structures on the micron to nanometer order have received much attention owing to their potential applications in various fields such as electrochemical, optoelectrical, and biological sciences. Although the techniques commonly used in fabricating nano-/microstructured silicon are conventional lithographic techniques using a resist mask with an optical, electron, or X-ray bea...

We have developed a one-step, hydrofluoric acid-free hydrothermal etching method that not only produces bismuth nano/micrometer-sized spheres but also prepares porous silicon with vertical holes. By controlling the heating temperature and time, nanoscale vertical-channeled porous silicon can be received. Our result indicated that the Bi clusters were formed first on the wafer surface. Then the ...

The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input p...