E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power device applications. The FEG-HEMT demonstrates a combination of polarization and trapping process in the ferro-charge-storage stack, leading to positive threshold voltage shift operations. In this work, FEG-HEMTs with various Hf-based Zr-based layers are systematically studied. whi...
