Femtosecond-laser photoemission was used to investigate the electron dynamics in the layered semiconductors MoSe2 and WSe2. Photoexcitation with 200-fs pulses of 2.03 eV light creates an electron gas with significant excess energy. Our measurements reveal a strong transient enhancement in the diffusive transport of the most energetic electrons relative to the conduction-band minimum. Additional...

Optimally doped silver selenide and silver telluride exhibit linear positive magnetoresistance over decades in magnetic field and on a scale comparable to the colossal magnetoresistance compounds. We use hydrostatic pressure to smoothly alter the band structure of Ag-rich and Ag-deficient samples of semiconducting Ag(2 +/-delta)Te of fixed stoichiometry and disorder. We find that the magnetores...

A classic problem of materials theory is to understand the properties of glasses and amorphous materials. Comprehension of disordered systems requires as an initial step atomistic models (coordinates of the atoms) that reproduce the known experimental features of the material. This includes structural (diffraction) information of course, but also higher-order correlations (as from new fluctuati...

SnSe and SnS have been grown by BridgmanStockbarger method. Loading time as a function of vickers microhardness has been measured at different temperatures in the range 303 K to 388K. Al measurement of hardness have been carried out on the cleavage planes. The activation energy for creep has been evaluated to be 2.92 and 1.75 K Cal/mole, respectively, for SnSe and SnS crystals.

Transition-metal dichalcogenides like molybdenum disulphide have attracted great interest as two-dimensional materials beyond graphene due to their unique electronic and optical properties. Solution-phase processes can be a viable method for producing printable single-layer chalcogenides. Molybdenum disulphide can be exfoliated into monolayer flakes using organolithium reduction chemistry; unfo...

— The major families of ternary compounds and their structures are reviewed, followed by a discussion of synthesis and crystal growth methods for ternary chalcogenides. Finally, a survey is given on a variety of recently synthesized multi-cation chalcogenides and some of their properties. 1. Scope and definitions. — To the vast majority of the participants of the Second International Conference...

Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, FETs with sputtered materials at low temperature (<= 250 C) could play a role flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore chalcogenide films...