نتایج جستجو برای: carrier gas composition

تعداد نتایج: 562025  

Journal: :The Journal of General Physiology 1981
R Latorre J J Donovan W Koroshetz D C Tosteson B F Gisin

Cyclo(L-Lac-L-Val-D-Pro-D-Val)3 (PV-Lac) a structural analogue of the ion-carrier valinomycin, increases the cation permeability of lipid bilayer membranes by forming a 1:1 ion-carrier complex. The selectively sequence for PV-Lac is identical to that of valinomycin; i.e., Rb+ greater than K+ greater than Cs+ greater than or equal to NH+4 greater than Na+ greater than Li+. The steady-state zero-...

2006
Yang Xu Bruce W. Alphenaar Robert S. Keynton

The damping effect of various gas environments on a silicon, lateral microresonator implemented with piezoresistive detection is investigated in this study. The resonant frequency of the cantilever shifts due to viscous damping by an amount that is directly determined by the molar mass of the gas, thereby providing a method to determine the composition of the gas environment. In addition, the m...

Fatemeh Yazdian Khosro Malek Khosravi Mahdi Pesaran Hajiabbas Mohsen Nosrati, Seyed Abbas Shojaosadati,

A dissolved methane sensor based on silicone tube was designed, constructed and optimized.The silicone tube diameter, silicone tube length and helium flow rate (as the carrier gas(were considered as process parameters to be optimized.A continuous stream of helium (50 mL/min) was directed through the tubing, sweeping out the...

Journal: :Journal of Middle European Construction and Design of Cars 2015

2011
Yumi TANAKA Yasushige MORI Kazuo MATSUURA

Ultrasonic atomization, a process of generating fine droplets through irradiation of high-frequency ultrasound to a gas–liquid interface from the liquid underneath, is applied to separating ethanol from its aqueous solution. Towards its practical use, the process of collecting in two cooling stages the ethanolenriched mist—generated via an ultrasonic atomizer (ultrasonic transducer operated at ...

2014
T. Brazzini

The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time [1]. The reduction of strain-related defects, the high polarization at the interface and high carrier mobility of the 2-dimensional electron gas (2DEG) make InAlGaN a viable way...

Journal: :American Journal of Public Health and the Nations Health 1941

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