High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates t...

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. ...

Polycrystalline Bi films were deposited onto p-GaAs~100! by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred @012# orientation. The p-GaAs/Bi junctions were rectifying and the barrier height and ideality factor decreased with increasing film thickness. For films greater than 0.5 mm in thickness, the barrier height was about 0.56 eV and the idealit...

AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al2O3 substrates reveals anomalies on Ids–Vds–T and Igs–Vgs–T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism r...

The first overtones of the stretching and bending vibrations of H2O and the first stretching overtone of D2O were measured to pressures of 37 GPa at 300 K, encompassing the stability fields of water, ice VI, and ice VII. The successive disappearance of the overtone peaks in ice VII with increasing pressure indicates that the barrier height in the double minimum hydrogen potential decreases at a...

We demonstrate the piezoelectric effect on the responsivity of a metal-semiconductor-metal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a -0.36% compressive strain in the wire, which effectively tuned the Schottky barrier ...

Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workf...

The ability of some RNA molecules to switch between different metastable conformations plays an important role in cellular processes. In order to identify such molecules and to predict their conformational changes one has to investigate the refolding pathways. As a qualitative measure of these transitions, the barrier height marks the energy peak along such refolding paths. We introduce a meta-...

Fission-related phenomena of heavy Λ hypernuclei are discussed with the constraint Skyrme-Hartree-Fock+BCS (SHF+BCS) method, in which a similar Skyrme-type interaction is employed also for the interaction between a Λ particle and a nucleon. Assuming that the Λ particle adiabatically follows the fission motion, we discuss the fission barrier height of 239 ΛU. We find that the fission barrier hei...

Spectral and kinetic behavior of thermal cis-to-trans isomerization of 4-aminoazobenzene (AAB) is examined in various solvents of different polarities. In contrast to azobenzene (AB), it is found the rate of thermal isomerization of AAB is highly dependent on solvent polarity. Accelerated rates are observed in polar solvents as compared to nonpolar solvents. Moreover, a decrease in the barrier ...