نتایج جستجو برای: bandgap energy

تعداد نتایج: 671173  

Journal: :ACS nano 2014
Patrick R Brown Donghun Kim Richard R Lunt Ni Zhao Moungi G Bawendi Jeffrey C Grossman Vladimir Bulović

The electronic properties of colloidal quantum dots (QDs) are critically dependent on both QD size and surface chemistry. Modification of quantum confinement provides control of the QD bandgap, while ligand-induced surface dipoles present a hitherto underutilized means of control over the absolute energy levels of QDs within electronic devices. Here, we show that the energy levels of lead sulfi...

2016
M Massicotte P Schmidt F Vialla K Watanabe T Taniguchi K J Tielrooij F H L Koppens

Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where car...

2010
L A Silva S Y Ryu J Choi W Choi M R Hoffmann

A hybrid photocatalytic system, which is based on a mixed-phase cadmium sulfide matrix composed of nano-particulate cubic-phase CdS (c-CdS) with average particle diameters of 13 nm and a bandgap energy of 2.6 eV, is coupled with bulk-phase hexagonal CdS (hex-CdS) that has a bandgap energy of 2.3 eV and is interlinked with elemental platinum deposits. The resulting hybrid nano-composite catalyst...

2015
Sang Gook Kim Harry Tuller

Photoelectric hot carrier generation in metal-semiconductor junctions allows for opticalto-electrical energy conversion at photon energies below the bandgap of the semiconductor. Which opens new opportunities in optical sensors and energy conversion devices. In this thesis research, the wafer-scale metallic-semiconductor photonic crystal (MSPhC) has been designed for photoelectric hot electrons...

Journal: :IEICE Electronic Express 2014
Ruhaifi Abdullah Zawawi Tun Zainal Azni Zulkifli

A new CMOS bandgap voltage reference (BGR) is proposed and simulated using Silterra 0.13 μm CMOS technology. The proposed BGR utilizes 3 curvature-corrected current generators that compensate for the output voltage variation in an extended temperature range. The proposed circuit generates an output voltage of 1.181 V with a variation of 380 μV from !50 °C to 150 °C.

2005
Jinsong Huang Gang Li Elbert Wu Qianfei Xu Yang Yang

The external electroluminescence (EL) quantum efficiency (QEEL) of a polymer light-emitting diode (PLED) can be affected by the following four factors: a) charge balance, b) the efficiency of producing singlet excitons, c) photoluminescence quantum efficiency (QEPL), and d) the output coupling effect. The QEPL can approach unity and the efficiency of producing singlet excitons can be high in lo...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه سیستان و بلوچستان 1390

a one dimensional dynamic model for a riser reactor in a fluidized bed catalytic cracking unit (fccu) for gasoil feed has been developed in two distinct conditions, one for industrial fccu and another for fccu using various frequencies of microwave energy spaced at the height of the riser reactor (fccu-mw). in addition, in order to increase the accuracy of component and bulk diffusion, instanta...

Journal: :journal of sciences, islamic republic of iran 2015
s. jurablu m. farahmandjou t. p. firoozabadi

zinc oxide (zno) nanopowders were synthesized by the sol–gel method from an ethanol solution of zinc sulfate heptahydrate in the presence of diethylene glycol surfactant. detailed structural and microstructural investigations were carried out using x-ray diffraction (xrd), high-resolution transmission electron microscopy (hrtem), field emission scanning electron microscopy (fe-sem), fourier tra...

Journal: :journal of nanostructures 2014
p. heydari a. r. asgharpour m. nazoktabar m. zahedinejad

in this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. in order to define silicon nanostructures, metal-assisted chemical etching (mace) was carried out with silver catalyst. provided solution (or materiel) in combination with laser interference lithogr...

Journal: :Microelectronics Journal 2004
Franco L. Fiori Paolo Stefano Crovetti

In this paper the susceptibility of integrated bandgap voltage references to Electromagnetic Interference (EMI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave (CW) EMI and the complete failures which may be experienced by bandgap circuits. The role of the susc...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید