We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave packet interacting with the charge induced on the metal surface. Induced quantum wires guide the transfer of electrons along metal paths and induced quantum dots...

We have synthesized high quality type-II CdTe/CdSe near infrared quantum dots using successive ion layer adsorption and reaction chemistry. Transmission electron microscopy reveals that CdTe/CdSe can be synthesized layer by layer yielding quantum dots of narrow size distribution. Excitation and photoluminescence spectra reveal discrete type-II transitions, which correspond to energy lower that ...

We independently determine the subpicosecond cooling rates for holes and electrons in CdSe quantum dots. Time-resolved luminescence and terahertz spectroscopy reveal that the rate of hole cooling, following photoexcitation of the quantum dots, depends critically on the electron excess energy. This constitutes the first direct, quantitative measurement of electron-to-hole energy transfer, the hy...

We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic forc...

CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR meth...

We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major candidates for the realization of quantum information storage and processing devices, provided that sufficently long coherence and relaxation times can be achieved. ...

We demonstrate that nanomechanically stamped substrates can be used as templates to pattern and direct the self-assembly of epitaxial quantum structures such as quantum dots. Diamond probe tips are used to indent or stamp the surface of GaAs(100) to create nanoscale volumes of dislocation-mediated deformation, which alter the growth surface strain. These strained sites act to bias nucleation, h...

Phonon induced unavoidable decoherence of orbital degrees of freedom (charge) in quantum dots is studied and the relevant time scales are estimated for state-of-the-art self-assembled nanostructures. An significant enhancement of the effective Fröhlich constant due to localization is indicated. Temporal partial inefficiency of spin Pauli blocking in quantum dots, caused by lattice inertia, is p...

The synthesis of III-V quantum dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsen...

A novel sensing system has been designed for naphthalene detection based on the quenched fluorescence signal of CdS quantum dots. The fluorescence intensity of the system reduced significantly after adding CdS quantum dots to the water pollution model because of the fluorescent static quenching f mechanism. Herein, we have demonstrated the facile methodology can offer a convenient and low analy...