We propose a method to predict the value of the external strain where a generic amorphous solid will fail by a plastic response (i.e., an irreversible deformation), solely on the basis of measurements of the nonlinear elastic moduli. While usually considered fundamentally different, with the elastic properties describing reversible phenomena and plastic failure epitomizing irreversible behavior...

Zr-based bulk metallic glass is an amorphous alloy. In order to study the burr problem in groove milling process of glass, force studied experimentally. Then effect parameters on was studied, and relationship between analyzed. further alloy, under same test parameters, single crystal alloy material (nickel base superalloy DD5) traditional polycrystalline metal (304 stainless steel) were selecte...

The evolution and annealing of pores in, and the crystallization of, vapor-deposited films of amorphous solid water have been studied by using variable-energy positron annihilation spectroscopy for temperatures in the range 50-150 K. Both positron and positronium annihilation provide insight to the nature of the grown-in pores and their evolution with temperature. Crystallization of the films w...

This is well known that amorphous state is metastable. Metastability of amorphous or glassy metal alloys offers the possibility of phase separation diffusion of various species and structural relaxation even though the alloys remains amorphous when they are annealed at temperature well below the crystallization temperature. All these changes have effect on the intrinsic magnetic properties such...

The results of transient transmission studies utilizing femtosecond laser pulses on hydrogenated amorphous silicon alloys are presented. In these studies, both the pump and probe photon energies are tuned through the exponential band tail region. The responses of the di!erent alloys are similar, but the technique is able to clearly distinguish between them based on their alloy composition and b...

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We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V - 1 ·s - 1 a turn-on voltage of -0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode...

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