There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3...

High-performance inversion-type enhancement-mod nchannel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm sh...

We report on the laser damage resistance of ion beam-sputtered oxide materials (Al2O3, Nb2O5, HfO2, SiO2, Ta2O5, ZrO2) and mixtures of Al2O3-SiO2, Nb2O5-SiO2, HfO2-SiO2, Ta2O5-SiO2, and ZrO2-SiO2, irradiated by single 500 fs pulses at 1030 nm. Laser-induced damage threshold (LIDT), refractive index, and bandgaps of the single-layer coatings are measured. For pure oxide materials a linear evolut...

The Al2O3-SiC reinforced Al7075 Metal Matrix Composite (MMCs) is fabricated through liquid metallurgical technique. Ceramic particulates were amalgamated into aluminium alloy to achieve improved mechanical properties and wear resistance. Al-7075/Al2O3/SiC hybrid MMCs produced by reinforcing 2%, 3%, 4% 5% of Al2O3 7% SiC particles. Microstructural analysis was carried out evaluate the uniform di...

Aluminium salt slag (also known as aluminium salt cake), which is produced by the secondary aluminium industry, is formed during aluminium scrap/dross melting and contains 15-30% aluminium oxide, 30-55% sodium chloride, 15-30% potassium chloride, 5-7% metallic aluminium and impurities (carbides, nitrides, sulphides and phosphides). Depending on the raw mix the amount of salt slag produced per t...

Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...

Traditional fibre-optic drawing involves a thermally mediated geometric scaling where both the fibre materials and their relative positions are identical to those found in the fibre preform. To date, all thermally drawn fibres are limited to the preform composition and geometry. Here, we fabricate a metre-long crystalline silicon-core, silica-cladded fibre from a preform that does not contain a...

This paper reports on the recent work carried out as part of the EU funded NanoMend project. The project seeks to develop integrated process inspection, cleaning, repair and control systems for thin films on flexible PV films. based on CIGS (Copper Indium Gallium Selenide CuInxGa (1-x)Se2). These films are fabricated on polymer film by the repeated deposition, and patterning, of thin layer mate...

The discs of synthetic auditory ossicle (Bioceram), which are composed of aluminium oxide (Al2O3), were implanted subcutaneously in the interscapular region of 16 rats. The implanted specimens were removed at 1, 3, 7 and 14 days after implantation. The decalcified 6 microns thick sections were stained with H.E. and cell types around the implants were counted microscopically. We found that an ac...

A new strategy for preparing spatially-controlled, multi-component films consisting of molecular light absorbing chromophores and water oxidation catalysts on high surface area, mesoporous metal oxide surfaces is described. Atomic layer deposition (ALD) is used to embed a surface-bound chromophore in a thin layer of inert Al2O3, followed by catalyst binding to the new oxide surface. In a final ...