The InAlAs/InGaAs High Electron Mobility Transistor (HEMT) fabricated on InP has proven to be the fastest transistor ever produced. It also appears to be the best candidate for power amplification at mm-wave frequencies. To date, however, very good highfrequency power performance has not been realized in these devices, and the lack of a clear understanding of the power-limiting mechanisms has h...

In this paper, we report the major conduction mechanisms of the gate leakage current (Ig) in AlGaN/GaN HEMTs and develop an analytical model for it in a surfacepotential based framework. GaN HEMTs with higher Al mole fraction in the AlGaN barrier layer experiences high electric field across this layer in the strong reverse gate bias region, leading to a significant Fowler-Nordheim (FN) tunnelin...

We have developed 0.1-μm gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeterwave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer deposition (ALD) aluminum oxide (Al2O3) and plasma-enh...

One of the most active research areas in the field of radar applications is the development of collisionavoidance systems (CAS) for automotive industry. The first prototypes of HEMT-based CAS chipsets operating at 77GHz have been recently demonstrated [1]. Such chipsets will greatly benefit from the addition of a monolithic transceiver switch, which would allow using a single antenna for both t...

Abstract In this study, AlGaN/GaN high-electron-mobility transistor (HEMTs) with 65- and 38-nm channel layers back-barrier were fabricated. The isolation process resulted in damage related to the thickness of layer, which deteriorated properties such as sheet resistance Rsh transconductance gm. These attributed surface oxidation AlGaN barrier, simulation results showed that dependence on trap l...

This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. was grown on sapphire substrate. Prior to growth AlGaN layer, GaN layer via two-step growth. In first step, V/III ratio applied at 1902 and then 3046 in second step. The FWHMs XRD (002) (102) peaks were around 205 arcsec ((002) peak) 277 ((102) peak...

Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine plasma implantation technology is evidenced. Devices under test are co-integrated into the OMMIC commercial D006GH/D01GH MMIC process, providing fluorine-free normally-on HEMTs. Gate reverse bias step-stress experiment at a drain fixed voltage of 0 V, carried out as well on ones ones, shows permanent negative shift thre...

On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and current switching. This paper describes design a tester for double-pulse switching test measurement dynamic on-state resistance unpackaged High-Electron-Mobility Transistors (GaN HEMTs). The is capable an inductive load at drain-to-source voltage up 400 V drain 10 A. De...

Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, email: [email protected] The last twenty years have witnessed numerous de...