نتایج جستجو برای: al2o3 water

تعداد نتایج: 561490  

2015
Xing Wang Hong-Xia Liu Chen-Xi Fei Shu-Ying Yin Xiao-Jiao Fan

In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier laye...

2003
Gan Shuyi Boudewijn Doctor Kerstin Worhoff

Al2O3 is commonly used as host material for Er-doped integrated optical amplifiers. In this paper, a Graeco-Latin square is used in DC reactive magnetron sputtering deposition experiment in order to get low optical losses Al2O3 layer. By reasonable selection and careful arrangement of experimental parameters, an optimal combination of deposition parameters is obtained via statistic analysis wit...

2011
N. Putra Gunawan M. Baqi

This paper presents an experimental investigation of convective heat transfer coefficient for nanofluids using spiral pipe heat exchanger. The aim of this study is to investigate experimentally flow and convective heat transfer characteristics of water-based nanofluids flowing through a spiral pipe. The test section consist of spiral pipe with ratio pitch per diameter is 7.0 and mean hydraulic ...

2016
Lingwei Ma Yu Huang Mengjing Hou Jianghao Li Zhengjun Zhang

High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 she...

1997
J. M. McHale K. Yürekli D. M. Dabbs A. Navrotsky S. Sundaresan I. A. Aksay

The addition of small amounts (2-10 wt %) of SiO2 to γ-Al2O3 increases the temperature of heat treatment necessary for transformation to R-Al2O3 by ∼100 K. We have studied this system using high-temperature solution calorimetry in molten 2PbO‚B2O3 at 1043 K. Our results indicate that the spinel-type Al2O3-SiO2 solid solutions with 2-10 wt % SiO2 are always energetically metastable by 30-35 kJ‚m...

2016
Runhu Zhang Chao Hua Bingshuai Wang Yan Jiang Xiaoguang Duan

Cu–Zn/γ–Al2O3 catalysts were prepared by the impregnation method. Catalytic activity was evaluated for N2O decomposition in a fixed bed reactor. The fresh and used catalysts were characterized by several techniques such as BET surface area, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The Cu–Zn/γ–Al2O3 catalysts exhibit high activity and stability for N2O decomposition in mi...

Journal: :Journal of Sustainable Metallurgy 2022

In this study, iron tailings were used as raw materials mixing with Al2O3, SiO2, and/or CaO sintered at 950–1400 °C to produce glass ceramics. Al2O3/tailing and Al2O3/SiO2/tailing systems, the newly formed crystalline mullite (3Al2O3·2SiO2) reached its maximum content of 83.7 wt% for sample mass ratio 6/2/2. Al2O3/SiO2/CaO/tailing system, anorthite (CaAl2Si2O8) increased 72.9 7/8/4/6 1450 °C. T...

2010
Q.-H. CHEN W.-J. WANG W.-G. ZHANG

An investigation into the structure and chemical stability of green light emitting aluminum complexes of 8-hydroxyquinoline (Alqx)/Al2O3 colloids was performed. (Alqx)/Al2O3 ethanol colloid was characterized by the high resolution transmission electron microscopy (HRTEM), Fourier transform infrared spectroscopy, thermogravimetric and simultaneous differential thermal analysis, and thermogravime...

2010
J. Triska J. F. Wager

The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

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