نتایج جستجو برای: گشتل ge stell

تعداد نتایج: 20063  

2008
Ge Yasuhiro Oshima Yun Sun Duygu Kuzum Takuya Sugawara Krishna C. Saraswat Piero Pianetta Paul C. McIntyre

Correlations among interface properties and chemical bonding characteristics in HfO 2 /GeO x N y /Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO 2 atomic layer deposition (ALD). Ultra thin (~1.1 nm), thermally stable and aqueous etch-resistant GeO x N y interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to st...

Journal: :Journal of virology 2007
Aaron Farnsworth Todd W Wisner David C Johnson

The final assembly of herpes simplex virus (HSV) involves binding of tegument-coated capsids to viral glycoprotein-enriched regions of the trans-Golgi network (TGN) as enveloped virions bud into TGN membranes. We previously demonstrated that HSV glycoproteins gE/gI and gD, acting in a redundant fashion, are essential for this secondary envelopment. To define regions of the cytoplasmic (CT) doma...

Journal: :ACS applied materials & interfaces 2014
Jae-Hyun Lee Soon-Hyung Choi Shashikant P Patole Yamujin Jang Keun Heo Won-Jae Joo Ji-Beom Yoo Sung Woo Hwang Dongmok Whang

We synthesized thermally stable graphene-covered Ge (Ge@G) nanowires and applied them in field emission devices. Vertically aligned Ge@G nanowires were prepared by sequential growth of the Ge nanowires and graphene shells in a single chamber. As a result of the thermal treatment experiments, Ge@G nanowires were much more stable than pure Ge nanowires, maintaining their shape at high temperature...

2008
Zhiwen Zhou Cheng Li Hongkai Lai Songyan Chen Jinzhong Yu

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 10 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was ...

2011
Cesare Frigeri Miklós Serényi Nguyen Quoc Khánh Attila Csik Ferenc Riesz Zoltán Erdélyi Lucia Nasi Dezső László Beke Hans-Gerd Boyen

Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficient...

2006
Anna Baranov A. V. Federov Tatiana Perova R. A. Moore V. Yam A. V. Baranov A. V. Fedorov

The built-in strain and composition of as-grown and Si-capped single layers of Ge/Si dots grown at various temperatures 460–800 °C are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-i...

Journal: :Inorganic chemistry 2003
Steven A Poling Carly R Nelson Jacob T Sutherland Steve W Martin

X-ray diffraction analysis reveals the thiogermanic acid H(4)Ge(4)S(10) possesses discrete adamantane-like Ge(4)S(10)(4)(-) complex anions. Each thioanion is composed of four corner shared GeS(2.5)(-) tetrahedral units. Crystals were grown from anhydrous liquid hydrogen sulfide reactions with glassy germanium sulfide at room temperature. The crystal structure was solved and refined from single ...

1998
C. Collazo-Davila

A structure model for the Ge(111)-(4×4)-Ag surface is proposed. The model was derived by applying direct methods to surface X-ray diffraction data. It is a missing top layer reconstruction with six Ag atoms placed on Ge substitutional sites in one triangular subunit of the surface unit cell. A ring-like assembly containing nine Ge atoms is found in the other triangular subunit. The stability of...

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