Correlations among interface properties and chemical bonding characteristics in HfO 2 /GeO x N y /Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO 2 atomic layer deposition (ALD). Ultra thin (~1.1 nm), thermally stable and aqueous etch-resistant GeO x N y interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to st...

The final assembly of herpes simplex virus (HSV) involves binding of tegument-coated capsids to viral glycoprotein-enriched regions of the trans-Golgi network (TGN) as enveloped virions bud into TGN membranes. We previously demonstrated that HSV glycoproteins gE/gI and gD, acting in a redundant fashion, are essential for this secondary envelopment. To define regions of the cytoplasmic (CT) doma...

We synthesized thermally stable graphene-covered Ge (Ge@G) nanowires and applied them in field emission devices. Vertically aligned Ge@G nanowires were prepared by sequential growth of the Ge nanowires and graphene shells in a single chamber. As a result of the thermal treatment experiments, Ge@G nanowires were much more stable than pure Ge nanowires, maintaining their shape at high temperature...

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 10 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was ...

Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficient...

The built-in strain and composition of as-grown and Si-capped single layers of Ge/Si dots grown at various temperatures 460–800 °C are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-i...

X-ray diffraction analysis reveals the thiogermanic acid H(4)Ge(4)S(10) possesses discrete adamantane-like Ge(4)S(10)(4)(-) complex anions. Each thioanion is composed of four corner shared GeS(2.5)(-) tetrahedral units. Crystals were grown from anhydrous liquid hydrogen sulfide reactions with glassy germanium sulfide at room temperature. The crystal structure was solved and refined from single ...

A structure model for the Ge(111)-(4×4)-Ag surface is proposed. The model was derived by applying direct methods to surface X-ray diffraction data. It is a missing top layer reconstruction with six Ag atoms placed on Ge substitutional sites in one triangular subunit of the surface unit cell. A ring-like assembly containing nine Ge atoms is found in the other triangular subunit. The stability of...