The status of transparent SiC for short wave (3–5 μm) windows and domes is reviewed. Transparent β-SiC was fabricated by the pyrolysis of methyltrichlorosilane in the presence of excess H2 and argon in a hot wall, chemical vapor deposition reactor. Characterization of the material indicates that the transparent SiC is a theoretically dense, void free, highly pure (99.9996%) cubic material posse...

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane...

Recently, a new model selection criterion called the subspace information criterion (SIC) was proposed. SIC works well with small samples since it gives an unbiased estimate of the generalization error with finite samples. In this paper, we theoretically and experimentally evaluate the effectiveness of SIC in comparison with existing model selection techniques including the traditional leave-on...

Some isolates of the significant human pathogen Streptococcus pyogenes, including virulent strains of the M1 serotype, secrete protein SIC. This molecule, secreted in large quantities, interferes with complement function. As a result of natural selection, SIC shows a high degree of variation. Here we provide a plausible explanation for this variation and the fact that strains of the M1 serotype...

The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by E...

Metal matrix composites (MMCs) have become attractive for engineering structural applications due to their excellent specific strength property and are increasingly seen as alternative to the conventional materials particularly in the automotive, aerospace and defence industries. Al/SiC MMC has aluminium matrix and the silicon carbide particles as reinforcements and exhibits many desirable mech...

Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. ...