Introduction: Silicon carbide is a particularly interesting phase because more than a hundred different polytypes can be formed in the laboratory. The formation of these polytypes depends strongly on growth conditions (e.g., temperature, pressure). Daulton et al. [1] used TEM to study the microstructures of ~500 presolar SiC grains in an acid residue of the Murchison meteorite (KJB fraction of ...

With increasing interest in the carbon cycle on arid land, there is an urgent need to quantify both soil organic carbon (SOC) and inorganic carbon (SIC) thus to assess various methods. Here, we present a study employing three methods for determinations of SOC and SIC in the Yanqi Basin of northwest China. We use an elemental analyzer for both SOC and SIC, the Walkley-Black method for SOC, a mod...

Background and objective: The use of fractional exhaled nitric oxide (FeNO) concentration has been proposed as a surrogate marker for monitoring airway response to specifi c inhalation challenge (SIC). We investigated the usefulness of FeNO measurements for monitoring airway response to SIC with occupational agents. Material and methods: Workers with suspected occupational asthma were recruited...

Silicon carbide (SiC), a compound of silicon and carbon, with chemical formula SiC, the beta modification ( β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperature below 1700°C. β-SiC will be the most suitable ceramic material for the future hard tissue replacement, such as bone and tooth. The in vitro cytotoxicity of β-SiC nanowires was investigated for the ...

abstract: in this study, al 2 o 3 –sic nanocomposites have been fabricated by mixing of alumina powder containing 0.05% weight magnesium oxide and silicon carbide nano powders, followed by hot pressing at 1650 0 c. the mechanical properties of al 2 o 3 -sic nanocomposites containing different volume fraction (2.5, 5, 7.5, 10 and 15%) of nano scale sic particles were investigated and compared wi...

The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expecte...

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...