This paper presents a DC–11GHz CMOS low noise amplifier (LNA) for software-defined radio (SDR). The broadband performance is extended to cover the spectrum from near DC to 11GHz by adopting extra inductors with modified resistive feedback, folded current reuse topology. Bandwidth extension is proposed by inserting pole splitting, interstage and LC ladder inductors. A source follower jointly act...

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate PZT –only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance RX and quality factor Q with the resonators’ silicon layer thickness tS...

A 2.4 GHz CMOS up-conversion mixer using novel current mirrors based on chartered 0.18 μm RF CMOS technology for 2.4 GHz wireless sensor network (WSN) application is presented in this paper. The current-reuse current-mirror and current-bleeding technique are used in the driver and switching stages of the mixer, respectively. The post-layout simulation results demonstrate that the novel up-conve...

A SiGe micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated for the first time. Our experimental results show that the input return loss S11 is below 18 dB from DC to 20 GHz with voltage gains of 32, 26, and 25 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input ...

An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35m BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, whic...

This paper presents a compact two-stage ultrawideband low-noise amplifier (LNA). A common-gate topology is adopted for the input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. A low power consumption and a small chip area are obtained by optimizing the performance of the LNA with tight constraint on biasing ...

Presented is the performance of a highly integrated RF single-pole double-throw (SPDT) switch fabricated in a 0.18 μm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes ∼40 μA from a 3.4 V supply. The switch, based upon the 1.8 V thinoxide devices with resistive body-floating and unit cell layout optimisati...

There are several 60 GHz transceiver architectures that have been explored and reported in the past employing the On Off Keying (OOK) Modulation. All of these designs are primarily based on the conventional bulk CMOS architecture. In this paper, we propose a power efficient double gate (DG) MOSFET based OOK Transmitter in 32 nm DG FinFET technology. The proposed novel OOK modulator consists of ...

In this paper, a summary of our work in the area of tunable microwave circuits based on thin film ferroelectrics is presented. First, a technique is introduced to improve the linearity of thin film ferroelectric tunable capacitors. Measurements show an improvement in the 3rd order intermodulation point at the input (IIP3) of 16 dB. Next, the design and fabrication of an impedance tuner employin...

A large dynamic-range Variable Gain Amplifier (VGA) suitable for Ultra Wide Band (UWB) applications is presented. The VGA is composed of three programmable variable gain amplifier stages followed by an output buffer. Such wide bandwidth allows our proposed VGA to be used in multi-standard protocols. Power reduction is developed for the variable gain amplifier stages. Thorough analyses of the mi...