نتایج جستجو برای: حذف متوالی تداخل sic

تعداد نتایج: 46269  

2017
Eiichi Murakami Takahiro Furuichi Tatsuya Takeshita Kazuhiro Oda

2018
Boris Bukh Christopher Cox

How can d+k vectors in R be arranged so that they are as close to orthogonal as possible? In particular, define θ(d, k) := minX maxx 6=y∈X |〈x, y〉| where the minimum is taken over all collections of d + k unit vectors X ⊆ R. In this paper, we focus on the case where k is fixed and d → ∞. In establishing bounds on θ(d, k), we find an intimate connection to the existence of systems of ( k+1 2 ) e...

Journal: :CoRR 2013
Peng Li Rodrigo C. de Lamare

In this paper, a low-complexity multiple feedback successive interference cancellation (MF-SIC) strategy is proposed for the uplink of multiuser multiple-input multiple-output (MU-MIMO) systems. In the proposed MF-SIC algorithm with shadow area constraints (SAC), an enhanced interference cancellation is achieved by introducing constellation points as the candidates to combat the error propagati...

2016
Jianwu Sun Valdas Jokubavicius L. Gao Ian Don Booker Mattias Jansson Xinyu Liu M. Linnarsson P. Wellmann I. Ramiro A. Marti Rositsa Yakimova Mikael Syväjärvi Lu Gao Ian Booker Jan P. Hofmann Emiel J. M. Hensen Margareta Linnarsson Peter Wellmann Iñigo Ramiro Antonio Marti

There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate...

2007
Jingchun Zhang Carlo Carraro Roger T. Howe Roya Maboudian

Polycrystalline 3C-SiC (poly-SiC) is a promising structural material for microelectromechanical systems (MEMS) used in harsh environments. In order to realize poly-SiC based MEMS devices, the electrical, mechanical and metal contact properties of poly-SiC have to be optimized. The poly-SiC films, reviewed here, are deposited by low pressure chemical vapor deposition using 1,3-disilabutane (DSB)...

2011
Saurav Goel Xichun Luo Robert L Reuben Waleed Bin Rashid

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been u...

Journal: :Occupational medicine 2013
T Hannu I Lindström P Palmroos O Kuuliala R Sauni

BACKGROUND It has previously been shown that a positive skin prick test (SPT) result is a good predictor of a positive specific inhalation challenge (SIC) in patients with occupational asthma (OA) related to wheat or rye flours. This association has not been previously studied in OA attributable to obeche wood. AIMS To describe a clinical series of patients with OA induced by obeche wood. To ...

Journal: :journal of mechanical research and application 2011
g. hemath kumar m. sreenivasan s. muthu kumar n. dilip raja

in recent years the aluminum matrix composites are gaining wide spread applications in automotive, aerospace, defense, sport and other industries. the reason for this is their exciting properties like high specific strength, stiffness, hardness, wear resistance, dimensional stability and designer flexibility. the present work reports on mechanical properties and microstructure analysis of al-si...

Journal: :Microelectronics Journal 2005
T. V. Torchynska A. Díaz Cano S. Jiménez Sandoval M. Dybiec S. Ostapenko M. Mynbaeva

This paper presents results of porous Sic characterization using photoluminescence, Raman scattering and Atomic Force Microscopy. A comparative optical spectroscopy study on bulk Sic and porous Sic layers has shown a number of new features specific to nano-crystallite materials. The role of these effects on optical spectroscopy data in porous Sic accessed by photoluminescence and Raman scatteri...

2002
W. RICHTER

Multi-quantum well structures of 3C/4H-SiC polytypes grown either on stepped or on on-axis hexagonal SiC by molecular beam epitaxy have been investigated by conventional and high resolution TEM. The 3C-SiC layers were nearly free of defects and the interface between different polytypes was abrupt. For the 3C-SiC layers the strain state and the lattice parameters have been investigated to a high...

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