Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM) is a candidate technology to replace SRAM, assuming...

Physically unclonable functions (PUFs) have been touted for their inherent resistance to invasive attacks and low cost in providing a hardware root of trust for various security applications. SRAM PUFs in particular are popular in industry for key/ID generation. Due to intrinsic process variations, SRAM cells, ideally, tend to have the same start-up behavior. SRAM PUFs exploit this start-up beh...

As technology is scaled down, the importance of leakage current and power analysis for memory design is increasing. In this paper, we discover an option for low power interconnect synthesis at the 45nm node and beyond, using Fin-type Field-Effect Transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a mechanism for improving FinFETs eff...

As the technology scales down to 90 nm and below, static random access memory (SRAM) standby leakage power is becoming one of the most critical concerns for low power applications. In this article, we review three major leakage current components of SRAM cells and also discuss some of the leakage current reduction techniques including body biasing, source biasing, dynamic VDD, negative word lin...

The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical and home automation systems. IoT-compatible processors or devices need larger integrated memory circuits, static random access (SRAM). design such a with fast times low leakage challenge. In this article, we have proposed 7T SRAM cell using an InGaAs-dual pocket-dual gate-tunne...

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Complies with the regulations of this University and meets the accepted standards with respect to originality and quality. In order to meet the incessantly growing demand of performance, the amount of embedded or on-chip memory in microprocessors and systems-on-chip (SOC) is increasing. As much as 70% of the chip area is now dedicated to the embedded memory, which is primarily realized by the s...

An emerging technology known as Physical unclonable function (PUF) can provide a hardware root-of-trust in building the trusted computing system. PUF exploits intrinsic process variations during integrated circuit (IC) fabrication to generate unique response. This response differs from one other similar type of PUFs. Static random-access memory (SRAM-PUF) is memory-based PUFs which generated po...

SRAM is a most common embedded memory for CMOS ICs and it uses Bistable Latching circuitry to store a bit. This paper represents the simulation of different SRAM cells and their comparative analysis on different parameters such as Power Supply Voltage, Operating Frequency, Temperature and area efficiency etc. All the simulations have been carried out on BSIM 3V3 90nm technology at Tanner EDA tool.