Subsolidus phase relationships in the Ga2O3–SnO2–ZnO system were determined at 1250 ◦C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 and ZnGa2O4, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn2SnO4) to 4.7 eV (ZnGa2O4). All samples were white and insulating except those containing Ga-doped ZnO. Th...

In the present research, a simple electrochemical sensor based on carbon paste electrode (CPE) modified with ZnO-Zn2SnO4-SnO2 and graphene (ZnO-Zn2SnO4-SnO2/Gr/CPE) was developed for direct, simultaneous individual measurement of Acetaminophen (AC), Caffeine (Caf) Ascorbic acid (AA). The synthesized nanomaterials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-t...

High capacity, rapid-charging, and long-term recyclability are the essential characteristics of high-performance lithium-ion battery (LIB) electrodes, which particularly important in electric vehicle industry. Bimetallic Zn2SnO4 nanoparticles wrapped carbon shells were supersonically sprayed with reduced graphene oxide (rGO) nanosheets to fabricate binder-free, long-term-stable LIB anodes. The ...

The electron transport layer is very critical to the device performance in perovskite solar cells. In this work, we use a solution-processed method prepare uniform Zn2SnO4, SnO2, and ZnO thin films using similar experimental conditions. Perovskite cells (PSCs) based on different transporting layers are fabricated compared. Three energy level alignments produced by realized corresponding bandgap...

We present a series of efficient near-infrared (NIR) Cr3+-doped non-gallate long-persistence phosphors (Zn2SnO4: Cr and Zn(2-x) Al2xSn(1-x)O4: Cr) and highlight their special optical characteristics of broad emission band (650–1200 nm, peaking at 800 nm) and long afterglow duration (435 h). In the context of materials selection, these systems successfully avoid the existing ubiquitous reliance ...

Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol-gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on indi...