High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs ~001! substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A ~132! reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs ~234! surface. A high p-type doping level of 1.5310 cm was achieved for ~N1Te! triple-delta doping ~d doping! of ZnBeSe epila...

Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue...

The emitter doping of a solar cell usually affects the blue response of the cell because the blue light is strongly absorbed at the front of the cell in the emitter layer. However, we show here that changing the identity of the dopant at the front of the cell affects the performance of the back of the cell, sometimes more than the performance of the front of the cell. Specifically, a highly Zn-...

Zinc-doped InP(Zn) colloidal quantum dots (QDs) with narrow size distribution and low defect concentration were grown for the first time via a novel phosphine synthetic route and over a wide range of Zn doping. We report the influence of Zn on the optical properties of the obtained quantum dots. We propose a mechanism for the introduction of Zn in the QDs and show that the incorporation of Zn a...

The group-III elements, such as Al, Ga and In, are possible dopants for ZnO to improve the electric conductivity of ZnO thin film. Since Ga has lower cost than In and has higher oxidation resistance than Al, it becomes the preferred dopants for ZnO thin film for transparent conducting oxide (TCO) application. In the research, we used MOCVD method with Ga doping to prepare the Ga-doped ZnO thin ...

Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the...

The influence of B203 on the microshucture and magnetic properties of pure Mn-Zn ferrites has been investigated. A citrate gel processing route was employed to produce highly homogeneous Mn-Zn (MQ,~,Z~.,F~,,OJ ferrites undoped or doped with B203 (0-2.5wt%). The results show that B203 doping does not benefit the magnetic properties of these femtes, but promoted grain growth significantly. The in...

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It is known that the Zn doping profile in strained multi-quantumwell (MQW) InGaAsP lasers strongly affects the electro-optical characteristics of these devices and their temperature sensitivity. A systematic investigation of the excitation dependence of the active layer photoluminescence (PL) intensity from compressively strained InGaAsP MQW pin laser material with different Zn doping profiles ...

The influence of nonmagnetic impurities on the spectrum and dynamical spin structure factor of a model for CuGeO3 is studied. A simple extension to Zn-doped Sr Cu2 O3 is also discussed. Using exact diagonalization techniques and intuitive arguments we show that Zn doping introduces states in the spin-Peierls gap of CuGeO3. This effect can be understood easily in the large dimerization limit whe...