Thin yttria films were investigated for use as gate dielectrics in carbon nanotube field-effect transistors (CNTFETs) with the gate length scaled down to sub-50 nm size. The yttria film provided an omega-shaped gate dielectric with a low interface trap density, a low average sub-threshold swing of 74 mV per decade for both long and short CNTFETs, and a small drain-induced barrier lowering. It w...

This work describes the comparison of the amplification characteristics (gain) and the Noise figure (NF) of the Thulium and Erbium in three different host materials which the Yttria Alumina-Silica glass, Fluoride and Tellurite fiber glass. The gain using these host materials covers the range 1.45-1.65 μm. Thulium doped fiber amplifier (TDFAs) operated in the region of wavelength (1480-1510 nm) ...

The morphology of sol-gel derived dip-coated yttria-doped zirconia films containing variable amounts of yttria has been studied using in situ grazing-incidence small-angle X-ray scattering (GISAXS) whilst heated incrementally to 1000 °C. A procedure to analyse in situ GISAXS data has been devised which allows a quantitative analysis of time-dependent GISAXS data tracing processes such as chemic...

In this study various yttria doped  zirconia based thin films were prepared by the aqueous tape casting method. The rheological property of the paste was studies. The phase content and microstructure of the samples was investigated by X-ray diffraction and scanning electron microscope, respectively. The mechanical properties of thin films were studied by Vickers microhardness and nanoindentatio...

An yttria stabilised zirconia which exhibits a coreshell microstructure was investigated as a method to produce a zirconia with high ionic conductivity and improved thermal shock resistance. Zirconia grains consist of an outer shell of tetragonal zirconia with an inner core of monoclinic phase zirconia. Impedance spectroscopy was used to identify the e€ect of processing conditions on the grain ...

In this communication we elucidate a microstructural picture of proton conduction in nano-crystalline yttria-stabilized zirconia at low temperatures (Kim et al. Adv. Mater., 2008, 20, 556). Based on careful analysis of electrical impedance spectra obtained from samples with grain sizes of approximately 13 and approximately 100 nm under both wet and dry atmospheres over a wide range of temperatu...

Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temper...

Enhanced grain growth in ultra-thin yttria-doped-zirconia (YDZ) films synthesized under ultraviolet (UV) irradiation is reported. The mean grain size in UV-activated 7.5 mol % yttria doped zirconia films nearly 56 nm thick increased to 85 nm upon annealing in an oxygen-rich ambient at 900 C for one hour, while in thermally grown YDZ they grew only to ~15 nm under identical annealing conditions....

Degradation of yttria-stabilized zirconia dental implants abutments due to the tetragonal to monoclinic phase transformation was studied in detail by microstructural characterization using Electron Back Scatter Diffraction (EBSD). The amount and distribution of the monoclinic phase, the grain-size distribution and crystallographic orientations between tetragonal and monoclinic crystals in 3 mol...