نتایج جستجو برای: voltage stress

تعداد نتایج: 543481  

In this paper, a series Z-source inverter based on switched inductors cell is proposed for the first time. This inverter is able to increase the voltage gain in comparison to the conventional Z–source inverters in additon to solve the ST (shoot-through) state’s problems. In this inverter, the value of voltage gain is increased by increasing the number of used diodes and inductors in the switche...

This paper presents the analysin ,design and implementation of a high voltage ratio topology of DC-DC converter. The DC-DC converter has high voltage ratio with reduced input current, output voltage and output current ripple, and also reduces the voltage and current rating of power electronics components and compared with conventional boost converter. The voltage stress on the switches are  red...

AA Taherian AA Vafaei H Miladi-Gorgi

Previous studies indicated that stress and glucocorticoids have modulatory effects on acute pain. The aim of present study was to determine the interaction between stress and glucocorticoids with activation of voltage dependent Ca2+ channel on modulation of acute pain in mice. Male albino mice (25-30 g) were used for this experiment. Tail flick and hot plate were used for evaluation of analgesi...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه سیستان و بلوچستان - دانشکده مهندسی برق و کامپیوتر 1391

this thesis is presented 10 ghz voltage controlled ring oscillator for high speed application. the voltage controlled ring oscillator was designed and fabricated in 0.13یm cmos technology. the oscillator is 7-stages ring oscillator with one inverter replaced by nand-gate for shutting down in the ring oscillator during idle mode. tri-state inverter was used to control of 126 bit vector in ri...

Journal: :journal of nanostructures 2014
m. mohammadimehr b. rousta navi a. ghorbanpour arani

in this research, the surface stress effect on the nonlocal vibration of piezoelectric square plate reinforced by single walled carbon nanotubes (swcnts) based on classical plate theory (cpt) and first order shear deformation theory (fsdt) is presented. the elastic properties of piezoelectric nanocomposite plate are estimated by eshelby-mori-tanaka and the extended mixture rule approaches. the ...

2009
Ute Zschieschang Thomas Weitz Klaus Kern Hagen Klauk

The bias stress effect in pentacene organic thinfilm transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the timedependent threshold voltage shift to a stretched expo...

AA Taherian AA Vafaei H Miladi-Gorgi

Previous studies indicated that stress and glucocorticoids have modulatory effects on acute pain. The aim of present study was to determine the interaction between stress and glucocorticoids with activation of voltage dependent Ca2+ channel on modulation of acute pain in mice. Male albino mice (25-30 g) were used for this experiment. Tail flick and hot plate were used for evaluation of analgesi...

2016

In this paper, a novel transformerless interleaved high step-down conversion ratio dc–dc converter with low switch voltage stress is proposed. In this converter, two input capacitors are series-charged by the input voltage and parallel discharged by a new twophase interleaved buck converter. Based on the capacitive voltage division, the main objective of the voltage-divider circuit in the conve...

2014
Bor-Ren Lin Chih-Chieh Chen

This paper presents an interleaved resonant converter to reduce the voltage stress of power MOSFETs and achieve high circuit efficiency. Two half-bridge converters are connected in series at high voltage side to limit MOSFETs at Vin/2 voltage stress. Flying capacitor is used between two series half-bridge converters to balance two input capacitor voltages in each switching cycle. Variable switc...

2001
Igor Polishchuk Chenming Hu

A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si3N4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each...

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