نتایج جستجو برای: vmin diagram
تعداد نتایج: 62677 فیلتر نتایج به سال:
An SRAM reliability test macro is designed in a 1.2V, 65nm CMOS process for statistical measurements of Vmin degradation. An automated test program efficiently collects statistical Vmin data and reduces test time. The proposed test structure enables Vmin degradation measurements for different SRAM failure modes such as the SNM-limited case and the access-time-limited case. The impact of voltage...
Distillation is responsible for a significant amount of the energy consumption of the world’s process industry and also in the natural gas processing. There is a significant energy saving potential that can be obtained by applying new energy saving distillation technology that has appeared in the last two decades. The fully thermally coupled dividing wall columns have the attractive feature of ...
Increased leakage current and device variability are posing major challenges to CMOS circuit designs in deeply scaled technologies. Static Random Accessed Memory (SRAM) has been and continues to be the largest component in embedded digital systems or Systems-onChip (SoCs). It is expected to occupy over 90% of the area of SoC by 2013 (Nakagome et al., 2003). As a result, SRAM is more vulnerable ...
The aim of this study was to define the preoperative diagnosis of thyroid follicular carcinoma by the vascular pattern and velocimetric parameters using high resolution pulsed and power Doppler ultrasonography (US). We compared the vascular pattern and the velocimetric parameters, such as peak systolic velocity (Vmax), end-diastolic velocity (Vmin), pulsatility index (PI), or resistance index (...
Changes in blood flow velocity through the tumors can induce damage of tumor microcirculation and thus may contribute to the final destruction of tumor masses after photodynamic therapy (PDT). The aim of this study was to evaluate the blood flow changes in a SCCVII mouse carcinoma during Photofrin-based photodynamic therapy by analyzing several quantitative spectral Doppler parameters [maximum ...
The hydridic character of octahedral metal hydride complexes of groups VI, VII and VIII has been systematically studied using molecular electrostatic potential (MESP) topography. The absolute minimum of MESP at the hydride ligand (Vmin) and the MESP value at the hydride nucleus (VH) are found to be very good measures of the hydridic character of the hydride ligand. The increasing/decreasing ele...
We prove that optimal strategies exist in perfect-information stochastic games with finitely many states and actions and tail winning conditions. Introduction We prove that optimal strategies exist in perfect-information stochastic games with finitely many states and actions and tail winning conditions. This proof is different from the algorithmic proof sketched in [Hor08]. 1. Perfect-Informati...
An electrostatics-based approach has been proposed for probing the weak interactions between lone pair containing molecules and π deficient molecular systems. For electron-rich molecules, the negative minima in molecular electrostatic potential (MESP) topography give the location of electron localization and the MESP value at the minimum (Vmin) quantifies the electron-rich character of that reg...
This paper presents a novel cache architecture using 7T/14T SRAM, which can improve its reliability with control lines dynamically. Our proposed 14T word-enhancing scheme can enhance its operating margin in word granularity by combining two words in a low-voltage mode. Furthermore, we propose a new testing method that maximizes the efficiency of the 14T word-enhancing scheme. In a 65-nm process...
The need for ultra low power circuits has forced circuit designers to scale voltage supplies into the sub-threshold region where energy per operation is minimized [1]. The problem with this is that the traditional 6T SRAM bitcell, used for data storage, becomes unreliable at voltages below about 700 mV due to process variations and decreased device drive strength [2]. In order to achieve reliab...
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