Highly anisotropic dry etching of tungsten silicide and tungsten polycides is required for the realization of submicron low resistance gates and interconnects for use in high performance complementary metal–oxide–semiconductor ~CMOS! and BiCMOS technologies. The current etch chemistries are not anisotropic, i.e., lateral etching of the tungsten silicide takes place which results in undesirable ...

In this paper, the mechanism of convex corner (CC) undercutting of Si 100 in pure aqueous KOH solutions is revisited by proposing the step-flow model of 3-D structuring as a proper description of the observed phenomena. The basic idea is to conceive the Si 100 anisotropic etching process, on the atomic scale, as a “peeling” process of terraced {111} planes at 110 oriented steps to understand al...

According to the theory of gearing, mathematical model a recess action (RA) worm gear with double-depth teeth has been developed in previous study. In this study, tooth undercutting aforementioned is investigated by applying surface equations and computer simulation programs. Limit curves can thus be plotted, minimum integer numbers for non-undercutting full RA, semi RA standard proportional ge...

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 μm radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates.