A novel memristor circuit is presented, which is generated from the canonical Chua’s circuit by replacing the Chua’s diode with a first order memristive diode bridge. The circuit dynamical characteristics with the variations of circuit parameters are investigated both theoretically and numerically. It can be found that the circuit has three determined equilibrium points, including a zero saddle...

-The resonant tunneling diode (RTD) has been applied to some kinds of microsensors and actuators .These sensors are based on the RTD with a frequency output. The oscillate circuit based on the RTD is the more importance factor on sensitivities and stability of the sensors .In this paper , two kinds of oscillator circuit are introduced, the principle function of the oscillator circuit is explain...

As the technology scales down the leakage current in the circuit increases due to reduction in threshold voltage and Negative Bias Temperature Instability (NBTI) producing aging effect in the circuit. Leakage current and NBTI strongly depends on Input Vector Control Technique (IVC) , but IVC is not effective for larger circuits. Therefore in this paper two new designs (1)Ultra low power diode b...

For analyzing the long-term behavior of thin film a-Si/μc-Si photovoltaic modules, it is important to observe the light-induced degradation (LID) in dependence of the temperature for the parameters of the one-diode model for solar cells. According to the IEC 61646 standard, the impact of LID on module parameters of these thin film cells is determined at a constant temperature of 50°C with an ir...

Absfract—This paper describes and analyzes the circuits which have been used successfully for TRAPATT oscillator studies. The results lead to a better understanding of the TRAPATT oscillator and yield a simple model of the oscillator which is useful for circuit design. The circuit characteristics of ms experimental TRAPATT oscillator are determined from measurements on the circuits and from equ...

Effects of temperature on electrical parameters of polysilicon solar cells, fabricated using the phosphorous spin-on diffusion technique, have been studied. The current density–voltagecharacteristics of polycrystalline silicon solar cells were measured in dark at different temperaturelevels. For this purpose, a diode equivalent model was used to obtain saturation current densi...